Wednesday, September 26

- 20 - Wednesday, September 26 2F B-1 2F B-2 1F C-1 1F C-2 1F D 1F E 1F G 1F H 2F I 2F J 2F K 5F 554 5F 555 A-3: Novel Functional Devices (Area 7) (9:...

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A-3: Novel Functional Devices (Area 7) (9:00-10:15) Chairs: Y. Tanaka (Fujitsu) N. Iizuka (Toshiba)

B-3: PRAM/FeRAM (Area 4) (9:00-10:10) Chairs: T. Endoh (Tohoku Univ.) Y. Sasago (Hitachi)

C-3: Nanowire Devices (Area 13) (9:00-10:15) Chairs: S. Lehmann (Lund Univ.) S. Hara (Hokkaido Univ.)

E-3: III-V/Ge MOSFET (Area 1&3) (9:00-10:10) Chairs: D. Hisamoto (Hitachi) S. Tsujikawa (SONY)

F-3: III-V FETs (Area 6) (9:00-10:15) Chairs: K. Maezawa (Univ. of Toyama) S. hara (HRL)

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9:00 A-3-1 (Invited) Quantum information device based on NV center in diamond N. Mizuochi, Osaka Univ. (Japan)

9:00 B-3-1 (Invited) A Process Technology and Characterization for 20nm PRAM B. Kim, Y. Song, H. Jeong, D. Ha, Y. Kang, S. Ahn, J. Lee, K. Lee, D. Ahn, S. Nam, G. Jeong and C. Chung, Samsung Electronics Corp. (Korea)

9:00 C-3-1 (Invited) Metal Oxide Nanowires: Synthesis and Memristive Properties T. Yanagida, Osaka Univ. (Japan)

9:00 E-3-1 (Invited) III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS S. Takagi1, S. H. Kim1, R. Zhang1, M. Yokoyama1, N. Taoka1,2 and M. Takenaka1, The Univ. of Tokyo (Japan)

9:00 F-3-1 (Invited) InAs High-Electron Mobility Transistors on the Path to THz Operation J. A. del Alamo1 and D. H. Kim2, 1Microsystems Tech. Laboratories, MIT, Cambridge, and 2Previously with Teledyne Scientific (USA)

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9:30 A-3-2 Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers Y. Yasunaga, H. Ueyama, K. Morita, T. Kitada and T. Isu, Univ. of Tokushima (Japan)

9:30 B-3-2 Novel 2-bit Multi-level PCRAM Structure with a Triple-layered Phase Change Material Stack for High-density Storage Applications A. Gyanathan and Y. C. Yeo, National Univ. of Singapore (Singapore)

9:30 C-3-2 ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS H. Cheng1,2, S. Uno2,3, T. Numata1,2 and K. Nakazato1, 1Nagoya Univ., 2CREST and 3Ritsumeikan Univ. (Japan)

9:30 E-3-2 AN EXTENDED “Y FUNCTION” METHOD FOR SATURATION REGIME CHARACTERIZATION: APPLICATION TO BULK Si AND Ge TECHNOLOGIES C. Diouf1,2, A. Cros1, S. Monfray1, J. Mitard3, J. Rosa1, D. Gloria1 and G. Ghibaudo2, 1STMicroelectronics, 2IMEP-LAHC, MINATEC/INPG and 3 IMEC (France)

9:30 F-3-2 High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa M. Kashiwano, J. Hirai, S. Ikeda, M. Fujimatsu and Y. Miyamoto, Tokyo Tech (Japan)

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9:45 A-3-3 Fiber fuse terminator for above 20 W input K. Kurokawa and N. Hanzawa, NTT Corp. (Japan)

9:50 B-3-3 Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films H. Funakubo, A. Sumi, H. Morioka, S. Okamoto, S. Yokoyama, T. Okamoto and Y. Ehara, Tokyo Tech. (Japan)

9:45 C-3-3 Fully Encapsulated Gate-All-Around InAs Nanowire FET S. Sasaki, G. Zhang, K. Tateno, H. Suominen, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K. Muraki, NTT Basic Research Labs., NTT Corp. (Japan)

9:50 E-3-3 Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility M. Oda1, T. Irisawa1, Y. Kamimuta1, O. Ichikawa2 and T. Tezuka1, 1AIST and 2Sumitomo Chemical Co. Ltd. (Japan)

9:45 F-3-3 120-GHz-band InP HEMT Amplifier with GainEnhanced Topology M. Sato, S. Shiba, H. Matsumura, Y. Nakasha, T. Suzuki and N. Hara, Fujitsu Ltd. (Japan)

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10:00 F-3-4 Cross-correlation measurement of current noise in mesoscopic conductors using a homemade cryogenic transimpedance amplifier M. Hashisaka1, M. Yamagishi1, K. Muraki2 and T. Fujisawa1, 1Tokyo Inst. of Tech. and 2NTT Basic Research Laboratories (Japan)

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Short Presentation PS-6 (10:45-12:00) Chairs: Y. Miyamoto (Tokyo Institute of Technology) N. Hara (Fujitsu)

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10:00 C-3-4 Isotope Effect on Phonon Thermal Transport in Silicon Nanowires J. Hattori1,2 and S. Uno1,2, 1Ritsumeikan Univ. and 2 JST, CREST (Japan)

10:00 A-3-4 2f-3f Optical Wavelength Conversion Device with PPLN waveguides K. Hitachi1, A. Ishizawa1, T. Nishikawa1, M. Asobe2 and T. Sogawa1, 1NTT Basic Res. Lab. and 2NTT Photonics Lab. (Japan)

Coffee Break Short Presentation (10:45-12:00) Short Presentation PS-7 (10:45-12:00) Chairs: Y. Tanaka (Fujitsu) H. Isshiki (The Univ. of Electro-Communications)

S Short Presentation PS-4 (10:45-12:00) Chairs: T. Eshita (Fujitsu Semiconductor) K. Hamada (Elpida Memory)

Short Presentation PS-13 (10:45-12:00) Chairs: S. Sato (AIST) S. Hara (Hokkaido Univ.)

Short Presentation PS-1 (10:45-12:00) Chairs: H. Morioka (Fujitsu Semiconductor) T. Aoyama (Toshiba)

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Short Presentation PS-3 (10:45-12:00) Chairs: M. Goto (Toshiba) D. Hisamoto (Hitachi)

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G-3: ReRam Devices with Nano Dots (Area 9) (9:00-10:00) Chairs: Y. Uraoka (NAIST) S. Kuroki (Hiroshima Univ.)

H-3: Quantum Dot Solar Cells (Area 15) (9:00-10:15) Chairs: Y. Kurokawa (Tokyo Institute of Technology) K. Nishioka (Univ. of Miyazaki)

I-3: Oxides (Area 8) (9:00-10:00) Chairs: T. Kawae (Kanazawa Univ.) T. Nagata (NIMS)

J-3: Variation & Reliability (Area 5) (9:00-10:15) Chairs: T. Hirose (Kobe Univ.) K. Kagawa (Shizuoka Univ.)

K-3: Future Interconnects (2) (Area 2) (9:00-10:30) Chairs: H. Ishii (Toyohashi Univ. of Technology) G. Beyer (IMEC)

L-3: Diamond Growth and Devices (Area 14) (9:00-10:15) Chairs: Y. Irokawa (NIMS) T. Funaki (Osaka Univ.)

M-3: OLED and Photonic Devices (Area 10) (9:00-10:15) Chairs: H. Kajii (Osaka Univ.) K. Takimoto (Canon)

9:00 G-3-1 Effects of Guided Filament Formation in NiO-ReRAM Using Bio-nanoparticle M. Uenuma1,2, T. Ban1,2, B. Zheng1,2, M. Horita1,2, Y. Ishikawa1,2, I. Yamashita1,2 and Y. Uraoka1,2, 1NAIST and 2CREST (Japan)

9:00 H-3-1 (Invited) Si/SiO2 Multiple Quantum Wells for AllSilicon Tandem Cells B. Berghoff, N. Wilck, S. Suckow, S. Nordmann, B. Spangenberg and J. Knoch, RWTH Aachen Univ. (Germany)

9:00 I-3-1 (Invited) Development of novel piezoelectric materials for Si-based MEMS application H. Funakubo, S. Yasui, K. Yazawa, J. Nagata, T. Oikawa, H. Morioka, T. Yamada and H. Uchida, 1Tokyo Tech., 2Nagoya Univ., 3 PREST JS and 4Sophia Univ. (Japan)

9:00 J-3-1 Sensitivity of SRAM Operation against AC Power Supply Voltage Variation T. Sawada1, H. Takata2, K. Nii2 and M. Nagata1, 1Kobe Univ. and 2Renesas Electronics Corp. (Japan)

9:00 K-3-1 (Invited) Silicon photonics transceivers with integrated hybrid lasers J. M. Fedeli1, D. Virot1,2,3, G.H. Duan5, L. Vivien2, D. Thomason6, J. M. Hartmann1, C. Jany5, P. Grosse1, A. Le Liepvre5, R. Bogaerts4, G. Reed6, D. Van Thourhout4 and F. Lelarge5, 1CEA, LETI, Minatec Campus, 2 Institut d’Electronique Fondamentale (IEF), Univ., 3STMicroelectronics, Silicon Tech. Development, 4Photonic Research Group, Ghent Univ., 5III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and CEA and 6ECS/ORC, Univ. of Southampton (France)

9:00 L-3-1 (Invited) Progress in technologies of fabrication of single-crystal diamond wafers with inchsize area H. Yamada, A. Chayahara, Y. Mokuno, N. Tsubouchi and S. Shikata, AIST (Japan)

9:00 M-3-1 (Invited) Dielectric and photoinduced absorption spectroscopies for characterization of organic photovoltaic devices H. Naito1,2, T. Kobayashi1 and T. Nagase1, 1 Osaka Prefecture Univ. and 2CREST-JST (Japan)

9:15 G-3-2 Enhanced memory performance using forming free IrOx/GdOx/W crossbar resistive switches D. Jana1, S. Maikap1, A. Prakash1, H. Y. Lee2, W. S. Chen2, F. T. Chen2 and M. J. Tsai2, 1Chang Gung Univ. and 2Indus. Tech. Res. Inst. (Taiwan)

9:30 H-3-2 Improvement of Electrical Properties of Silicon Quantum Dots Superlattice Solar Cells with a Dopant Diffusion Barrier Layer S. Yamada1, Y. Kurokawa1, S. Miyajima1 and M. Konagai1,2, 1Tokyo Inst. of Tech. and 2 Photovoltaic Research Center (PVREC) (Japan)

9:30 I-3-2 Fabrication and Characterization of MFIS Capacitor Structure with Ferroelectric (Bi,Pr)(Fe,Mn)O3 Thin Films T. Kawae, Y. Seto and A. Morimoto, Grad. School of Natural Sci. and Tech., Kanazawa Univ. (Japan)

9:20 J-3-2 Impact of Body-Biasing Technique on RTN-induced Delay Fluctuation T. Matsumoto1, K. Kobayashi2,3 and H. Onodera1,3, 1Kyoto Univ., 2Kyoto Inst. Tech. and 3JST CREST (Japan)

9:30 K-3-2 Sub-micron-accuracy Gold to Gold Interconnection Flip-Chip Bonding Approach for Electronics-Optics Heterogeneous Integration T. T. Bui, L. Ma, M. Suzuki, F. Kato, S. Nemoto, N. Watanabe and M. Aoyagi, National Inst. of Advanced Industrial Science and Tech. (Japan)

9:30 L-3-2 Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+Diamond Y. Hoshino1, T. Iwasaki1,2,3, K. Tsuzuki1, H. Kato2,4, T. Makino2,4, M. Ogura2,4, D. Takeuchi2,4, T. Matsumoto2,4, S. Yamasaki2,4 and M. Hatano1,2,3, 1Toyko Tech., 2JSTCREST, 3JST-ALCA and 4AIST (Japan)

9:30 M-3-2 White Light Emission from Microcavity Organic Light-Emitting Diodes with Color-Coverting CdSe/ZnS Quantum Dots P. H. Tsai1, C. Y. Huang2, H. C. Yu1, Y. C. Chen1, H. C. Yan1 and Y. K. Su1,3, 1National Cheng Kung Univ., 2National Taitung Univ. and 3Kun Shan Univ. (Taiwan)

9:30 G-3-3 Nanodome improved resistive switching memory performance using IrOx nanodots embedded in AlOx film W. Banerjee and S. Maikap, Chang Gung Univ. (Taiwan)

9:45 H-3-3 Enhancement of Electrical Conductivity by Miniband Formation in Silicon Quantum Dot Superlattice Structure M. Igarashi1,2, W. Hu1,2, M. Erman1,2 and S. Samukawa1,2, 1Tohoku Univ. and 2CREST (Japan)

9:45 I-3-3 Direct heteroepitaxial growth of ZnO over GaN crystal in aqueous solution T. Hamada, A. Itoh, N. Nagao, N. Suzuki, E. Fujii and A. Tsujimura, Panasonic Corp. (Japan)

9:40 J-3-3 Variability Analysis of Sense Amplifier for Subthreshold Ultra-Thin-Body SOI SRAM Applications M. L. Fan, V. P. H. Hu, Y. N. Chen, K. C. Lee, P. Su and C. T. Chuang, Univ. of National Chiao Tung (Taiwan)

9:50 K-3-3 Optoelectronic Heterogeneous Integration Technology Using Reductant-assisited Self-Assembly with Cu/Sn Microbump Y. Ito1,2, T. Fukushima2, K. W. Lee2, K. Choki1, T. Tanaka2 and M. Koyanagi2, 1 Sumitomo Bakelite Co., Ltd. and 2Tohoku Univ. (Japan)

9:45 L-3-3 Thermally Stable Operation of Diamond Field-Effect Transistors by NO2 Adsorption and Al2O3 Passivation K. Hirama1, H. Sato1, Y. Harada1, H. Yamamoto1 and M. Kasu1,2, 1NTT Basic Res. Labs. and 2Saga Univ. (Japan)

9:45 M-3-3 A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes (OLEDs) T. Hirai, K. Weber, J. O’Connell, M. Bown and K. Ueno, CSIRO (Australia)

9:45 G-3-4 Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes S. Maikap1, S. Z. Rahaman1, Y. Hsuan1, C. S. Lai1, H. Y. Lee2, W. S. Chen2, F. T. Chen2, M. J. Kao2 and M. J. Tsai2, 1Chang Gung Univ. and 2Indus. Tech. Res. Inst. (Taiwan)

10:00 H-3-4 Photovoltaic Property of Nanocrystalline Silicon Membranes Cells R. Mentek, B. Gelloz, D. Hippo and N. Koshida, Tokyo Univ. of Agr. & Tech. (Japan)

10:00 J-3-4 (Late News) A Novel Sensor Structure and its Fabrication Process for Integrated CMOSMEMS Accelerometer D. Yamane1, T. Matsushima2, T. Konishi2, G. Motohashi1, H. Ito1, N. Ishihara1, H. Toshiyoshi3, K. Machida1,2 and K. Masu1, 1 Toyko Tech., 2NTT Advanced Tech. Corp. and 3Univ. of Tokyo (Japan)

10:10 K-3-4 Impact of Al and Cu electrodes on GeOx/ W for high-performance crossbar resistive switching memories S. Z. Rahaman1, S. Maikap1, C. S. Lai1, H. Y. Lee2, W. S. Chen2, F. Chen2 and M. J. Tsai2, 1 Chang Gung Uinv. and 2Indus. Techn. Res. Inst. (Taiwan)

10:00 L-3-4 Diamond high-power and high-temperature SBDs H. Umezawa, Y. Kato and S. Shikata, Nat'l Inst. Adv. Indus. Sci. Tech. (AIST) (Japan)

10:00 M-3-4 Efficient solution-processed green phosphorescent organic light emitting diodes by using bipolar host material Y. S. Tsai, A. Chittawanij, C. Y. Ou, L. A. Hong and F. S. Juang, National Formosa Univ. (Taiwan)

Short Presentation PS-2 (10:45-12:00) Chairs: M. Ueki (Renesas) T. Fukushima (Tohoku Univ.)

Short Presentation PS-14 (10:45-12:00) Chairs: H. Umezawa (AIST) M. Kato (Nagoya Institute of Technology)

Short Presentation PS-10&12 (10:45-12:00) Chairs: E. Itoh (Shinshu Univ.) H. Usui (Tokyo Institute of Technology)

Coffee Break Short Presentation (10:45-12:00) Short Presentation PS-9 (10:45-12:00) Chairs: H. Goto (NTT) Y. Uraoka (NAIST)

Short Presentation PS-15 (10:45-12:00) Chairs: A. Masuda (AIST) H. Katagiri (Nagaoka National College of Technology )

Short Presentation PS-8 (10:45-12:00) Chairs: H. Hibino (NTT) K. Hara (Shizuoka Univ.)

Short Presentation PS-5&11 (10:45-12:00) Chairs: A. Kitagawa (Kanazawa Univ.) L. Hongchin (NCHI)

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Wednesday, September 26 POSTER SESSION (13:30-15:00, Annex Hall) Area 1: Advanced LSI Processing and Materials Science

(17 Papers)

PS-1-13 Multi-Step Deposition and Low-Temperature Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealing as a Promising Means for Gate-Last High-k/Metal Gate Application K. S. Yew, C. H. Tang and D. S. Ang, Nanyang Technological Univ. (Singapore) PS-1-14 Rate Determining Process and Loading Effects in Si Etching with HCl Gas N. Morioka, J. Suda and T. Kimoto, Kyoto Univ. (Japan)

PS-1-1 Interface Stabilizing and EOT Scaling of Al2O3 /Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation J. Sun1,2, Y. Geng2, H. Lu2, W. Wu1, X. Ye1, Z. Yang1, Y. Zhao1 and Y. Shi1, 1Univ. of Nanjing and 2Univ. of Fudan (China)

PS-1-15 Ultra-High Resolution Depth Profiling of Carrier Concentration in P-implanted Silicon by HREELS S. J. Park1, N. Uchida1, H. Arimoto1,2, T. Tada1 and T. Kanayama1, 1National Inst. of Advanced Indus. Sci. and Tech. and 2Fujitsu Semiconductor Ltd. (Japan)

PS-1-2 Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical K. Kato1,2, S. Shibayama1, M. Sakashita1, W. Takeuchi1, N. Taoka1, O. Nakatsuka1 and S. Zaima1, 1Nagoya Univ. and 2Research Fellow of JSPS (Japan)

PS-1-16 Characterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurements T. Ono1, A. Ohta1, H. Murakami1, S. Higashi1 and S. Miyazaki2, 1Hiroshima Univ. and 2Nagoya Univ. (Japan)

PS-1-3 Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang and H. Nakashima, Kyushu Univ. (Japan) PS-1-4 Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy S. K. Wang1, B. Xue1, H. Liang2, Z. Mei2, Y. Li1, W. Zhao1, B. Sun1, X. Du2 and H. G. Liu1, 1Inst. of Microelectronics, Chinese Academy of Sci. and 2Inst. of Physics, Chinese Academy of Sci. (China) PS-1-5 High Quality Germanium Dioxide Formation Using Damage-Free and Low-Temperature Neutral Beam Oxidation Process A. Wada1, R. Zhang2, S. Takagi2 and S. Samukawa1, 1Tohoku Univ. and 2The Univ. of Tokyo (Japan)

PS-1-17 (Late News) Low-Temperature Formation of High-Quality Oxide for MOSFETs on Flexible Substrates H. Hasegawa, Y. Iijima, K. Adachi, S. Nozaki and K. Uchida, Univ. of Electro-Communications (Japan)

Area 2: Advanced Interconnect / Interconnect Materials and Characterization (12 Papers)

PS-1-6 Impacts of Interfacial Insulator on Poly-crystalline Germanium Growth in Low Temperature Processing S. Kabuyanagi1,2, T. Nishimura1,2, K. Nagashio1,2 and A. Toriumi1,2, 1Univ. of Tokyo and 2JST-CREST (Japan)

PS-2-1 Investigation of Electrical Performances for n-MOSFET Devices Integrating with Bonding and Thinning Technologies in 3D Integration C. A. Cheng1, C. H. Lu2, C. H. Ho3 and K. N. Chen4, 1National Chiao Tung Univ., 2National Chiao Tung Univ., 3National Nano Device Lab. and 4National Chiao Tung Univ. (Taiwan)

PS-1-7 Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh and M. Miyao, Kyushu Univ. (Japan)

PS-2-2 Improvement of Crystallographic Quality of Electroplated Copper Thin-Film Interconnections for 3D TSVs N. Murata, K. Suzuki, R. Furuya, O. Asai and H. Miura, Tohoku Univ. (Japan)

PS-1-8 Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET T. Ueno1, H. Miyoshi1, Y. Hirota1, J. Yamanaka2, K. Arimoto2, K. Nakagawa2, Y. Yusuke3, Y. Shiraki3 and T. Kaitsuka1, 1Tokyo Electron Ltd., 2Univ. of Yamanashi and 3Tokyo City Univ. (Japan) PS-1-9 Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection D. H. Zadeh, Y. Suzuki, H. Omine, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori and H. Iwai, Tokyo Inst. of Tech. (Japan) PS-1-10 Electrical Characteristics of Anatase-TiO2 Films by Low Temperature Fabrication M. Kimura1, T. Nabatame2, H. Yamada1, A. Ohi2, T. Chikyow2 and T. Ohishi1, 1Shibaura Inst. of Tech. and 2National Inst. for Materials Sci. (Japan) PS-1-11 Dependence of Chemical Structures of Transition Layer at SiO2/Si(100) Interface on Oxidation Temperature, Annealing in Forming gas, and Oxidizing Species T. Suwa1, A. Teramoto1, T. Muro2, Y. Kinoshita2, S. Sugawa1, T. Hattori1 and T. Ohmi1, 1Tohoku Univ. and 2Japan Synchrotron Radiation Res. Inst. (Japan) PS-1-12 Double-Gated Junctionless Vertical Channel Poly-Si Thin-Film Transistors Y. H. Chen, J. W. Lin, L. C. Yen, R. H. Kuo, Y. H. Lu, Y. H. Wu, P. Y. Kuo and T. S. Chao, National Chiao Tung Univ. (Taiwan)

PS-2-3 10-μm-Pitch In-Au Microbump Interconnection by Chip Self-Assembly with Excimer Lamp Irradiation for 3D LSI Applications T. Fukushima, J. Bea, M. Murugesan, K. Lee, T. Tanaka and M. Koyanagi, Tohoku Univ. (Japan) PS-2-4 Grapho-Assembly Technology for Sub-Micron Accuracy 3D Chip Stacking with High-Density Through-Si Vias and Metal Microbumps T. Fukushina1, M. Onishi1, J. Bea1, S. Hioki1, M. Murugesan1, K. Lee1, T. Tanaka2 and M. Koyanagi1, 1 New Industry Creation Hatchery Center (NICHe) and 2Dept. of Biomedical Engineering, Tohoku Univ. (Japan) PS-2-5 The Influence of Cu Diffusion from Cu Through-Silicon Via(TSV) on Device Reliability in the 3-D LSI by Using C-V and C-t Measurements J. C. Bea1, K. W. Lee1, T. Fukushima1, T. Tanaka2 and M. Koyanagi1, 1New Industry Creation Hatchery Center (NICHe), Tohoku Univ. and 2Dept. of Biomedical Engineering, Tohoku Univ. (Japan) PS-2-6 Analysis of Local Bending Stress Effect on CMOS Performance Fabricated in Thinned Si Chip for Chip-to-Wafer 3D Integration H. Kino, J. C. Bea, M. Murugesan, K. W. Lee, T. Fukushima, T. Tanaka and M. Koyanagi, Tohoku Univ. (Japan)

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PS-2-7 The Results of Self Annealing Process for a Copper Interconnection on the 4xnm DRAM Products H. J. Park1, I. C. Ryu2, S. H. Son2, J. S. Im3, J. H. Kwon3, Y. P. Song1, K. S. Jang1, C. R. Lee1, J. O. Nam1, K. I. Yoon1 and K.S. Yoon1, 1DRAM Development Division, 2Research Divisoin and 3Manufacturing Division (Korea) PS-2-8 Evaluation of Threshold Current Density in Interconnect with Reservoir Structure Using Numerical Modeling of Electromigration Damage K. Sasagawa and T. Yanagi, Hirosaki Univ. (Japan) PS-2-9 Layered Low-k Porous Silica Zeolite Films for Inter-Metal Dielectric with High Elastic Modulus T. Yamamoto1, T. Sato1, Y. Seino2, K. Hattori2, S.Kuroki1 and T. Kikkawa1, 1Hiroshima Univ. and 2AIST (Japan) PS-2-10 RF Inductors on Nanocrystalline Silicon Passivated HR-Si Substrates R. L. Wang1, Y. R. Lin1, P. Y. Liu1, C. J. Chen2, Y. K. Su2 and T. J. Hsueh3, 1National Kaohsiung Normal Univ., 2National Cheng Kung Univ. and 3National Nano Device Labs. (Taiwan) PS-2-11 Reduction of sheet resistances of PtSi alloying with Hf formed by Kr sputtering Y. Yoshimura and S. Ohmi, Toyko Tech. of Tech. (Japan) PS-2-12 Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET K. Asakawa, K. Yamamoto, D. Wang and H. Nakashima, Kyushu Univ. (Japan)

Area 3: CMOS Devices / Device Physics

(32 Papers)

PS-3-1 Current Enhancement of Green Transistors as Compare to Conventional Tunnel FETs with Dopant Segregated Process M. H. Lee1, J. C. Lin1, C. Y. Kao1, C. W. Chen2, J. D. Luo1, Y. J. Lee3 and G. L. Luo3, 1National Taiwan Normal Univ., 2National Cheng Kung Univ. and 3National Nano Device Lab. (Taiwan) PS-3-2 Influence of Structural Parameters on Performance of Schottky Tunneling FET Electrical Characteristics and its Scalability Y. Wu1,2,3, C. Dou1,2,3, K. Kakushima2, K.ohmori4, P. Ahmet1, T. watanabe5, K. Tsutsui2, A. Nishiyama2, N. Sugii2, K. Natori1, K. Yamada4, Y. Kataoka2, T. Hattori1 and H. Iwai1, 1Tokyo Inst. of Tech., 2Tokyo Inst. of Tech., 3Univ. of Tsukuba, 4Univ. of Tsukuba and 5Waseda Univ. (Japan) PS-3-3 Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies H. Y. Chang1, S. Chopra2, B. Adams2, J. Li2, S. Sharma2, Y. Kim2, S. Moffatt2, P. Y Chien1, B. C Huang1 and J. C. S. Woo1, 1Univ. of California, Los Angeles and 2Applied Materials Inc (USA) PS-3-4 Epitaxial Tunnel Layer Structure for Complementary Tunnel FETs Enhancement P. Y. Wang and B. Y. Tsui, National Chiao Tung Univ. (Taiwan) PS-3-5 EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage T. Mori, K. Fukuda, T. Yasuda, A. Tanabe, T. Maeda, S. O'uchi, Y. Liu, W. Mizubayashi, M. Masahara and H. Ota, GNC-AIST (Japan) PS-3-6 Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation Y. J. Yoon1, S. Cho3, J. H. Seo2, I. M. Kang1,2, B. G. Park4 and J. H. Lee1,2, 1National Univ. Kyungpook, 2 National Univ. Kyungpook, 3Univ. of Stanford and 4National Univ. of Seoul (Korea)

Wednesday, September 26 PS-3-7 Low Leakage Junctionless Vertical Pillar Transistor Y. C Yin1, H. C Chang1 and C. W Liu1,2, 1National Taiwan Univ. and 2National Nano Device Labs. (Taiwan)

PS-3-22 A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring NBTI Degradation J. Hong, Y. D. He, G. G. Zhang and X. Zhang, Peking Univ. (China)

PS-3-8 High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/ p Source/Drain Junctions C. T. Chung1, G. L. Luo2, B. Y. Chen2, C. W. Chen1, W. C. Chen1 and C. H. Chien1,2, 1National ChiaoTung Univ. and 2National Nano Device Laboratories (Taiwan)

PS-3-23 Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress D. Y. Choi1, C. W. Sohn1, H. C. Sagong1, E. Y. Jeong1, J. W. Jang1, C. K. Baek1, C. Y. Kang2, J. S. Lee1 and Y. H. Jeong1, 1Pohang Univ. of Sci. and Tech. (POSTECH) and 2SEMATECH (Korea)

PS-3-9 Subband Structure and Effective Mass of Two Dimensional Hole Gas in Strained Ge Channels Y. Hoshi1,2, R. Moriya2, K. Sawano1, N. Usami3, T. Machida2 and Y. Shiraki1, 1ARL, Tokyo City Univ., 2 IIS, Univ. of Tokyo and 3IMR, Tohoku Univ. (Japan) PS-3-10 Impact of Scattering on the Strained Ge Nanowire pFETs J. Qin, J. Zhang, G. Du and X. Liu, Peking Univ. (China) PS-3-11 Wire-Orientation Dependence in Device Performances of Si and InAs Nanowire MOSFETs under Ballistic Transport K. Shimoida1, Y. Yamada1, H. Tsuchiya1,2 and M. Ogawa1, 1Kobe Univ. and 2JST CREST (Japan) PS-3-12 A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process T. L. Lee, M. T. Tsai, Y. C. King and C. J. Lin, National Tsing-Hua Univ. (Taiwan) PS-3-13 Monte Carlo Study on the Role of High Channel Doping in Junctionless Transistors K. Nagai1, S. Koba1, H. Tsuchiya1,2 and M. Ogawa1, 1Kobe Univ. and 2JST CREST (Japan) PS-3-14 High-Performance CMOS Inverters Comprising Lateral Large-Grained Low-Temperature Poly-Si TFTs on Transparent Flexible Glass S. Kamo, K. Kondo and A. Hara, Tohoku Gakuin Univ. (Japan) PS-3-15 Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique T. Mizuno, J. Takehi, Y. Abe and H. Akamatsu, Kanagawa Univ. (Japan) PS-3-16 An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction X. Feng, W. Kang, Q. Cheng and Y. Chen, Shenzhen Graduate School, Peking Univ. (China) PS-3-17 Extraction of Carrier Concentration and Mobility of Heavily Doped Poly-Si Nanowires with Junctionless (JL) Transistor Structures Z. M. Lin1, H. C. Lin1,2 and T. Y. Huang1, 1National Chiao Tung Univ. and 2National Nano Device Labs. (Taiwan) PS-3-18 Impact of Backgate Bias on the Sensitivity of Threshold Voltage to Process and Temperature Variations for Ultra-Thin-Body GeOI and InGaAs-OI MOSFETs Considering Quantum Confinement C. H. Yu and P. Su, National Chiao Tung Univ. (Taiwan) PS-3-19 Off-Current Fluctuations in 10-nm Trigate MOSFETs - Impact of the Channel Geometry R. Granzner and F. Schwierz, Ilmenau Univ. of Tech. (Germany)

PS-3-24 Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization H. F. Chiu1, S. L. Wu2, Y. S. Chang1, S. J. Chang3, S. C. Tsai3, P. C. Huang3 and O. Cheng4, 1National Tsing Hua Uni., 2Cheng Shiu Uni., 3National Cheng Kung Uni. and 4United Microelectronics Corp. (Taiwan) PS-3-25 Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN) B. C. Wang1, S. L. Wu1, C. Y. Wu1, C. W. Huang1, T. Y. Lu1, P. C. Huang2 and S. J. Chang2, 1Univ. of NCKU and 2Univ. of NCKU (Taiwan) PS-3-26 1/f Noise Characteristic in Independent-Double-Gate-FinFET H. Sakai1, S. Ouchi2, K. Endo2, T. Matsukawa2, Y. X. Liu2, Y. Ishikawa2, T. Tsukada2, T. Nakagawa2, T. Sekigawa2, H. Koike2, M. Masahara2 and H. Ishikuro1, 1Keio Univ. and 2National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan) PS-3-27 Narrow Width Effects on High Frequency Performance and RF Noise of Sub-40nm Multi-finger nMOSFETs K. L. Yeh, C. S. Chang and J. C. Guo, National Chiao-Tung Univ. (Taiwan) PS-3-28 Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis S. C. Tsai1, S. L. Wu2, C. Y. Wu2, C. W. Huang2, Y. Y. Lu2, B. C. Wang1, S. J. Chang1, J. F. Chen1 and P. C. Huang1, 1Univ. of NCKU and 2Univ. of CSU (Taiwan) PS-3-29 Lifetime Evaluation on AC Stress in High-K / Metal-Gate with Using Dual-Pulsed-Test-System (DPTS) H. Mori, Y. Ikeda, T. Kato, T. Uemura and H. Matsuyama, FUJITSU SEMICONDUCTOR LTD. (Japan) PS-3-30 Study of Off-State Breakdown and Hot-Carrier Improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure C. R. Yan1, J. F. Chen1, C. Y. Lin2, H. T. Hsiu2, Y. C. Liao2, M. T. Yang2, Y. C. Lin2 and H. H. Chen2, 1 Univ. of Cheng Kung and 2Corp. of Powerchip (Taiwan) PS-3-31 (Late News) Investigation of P/NBTI in High-k Gate Dielectric MOSFETs by Id-RTS D. C. Huang and J. Gong, National Tsing Hua Univ. (Taiwan) PS-3-32 (Late News) The Experimental Observation of the Process Induced Random Dopant Effect in Trigate MOSFETs E. R. Hsieh1, H. M. Tsai1, S. S. Chung1, C. H. Tsai2, R. M. Huang2, C. T. Tsai2 and C. W. Liang2, 1 National Chiao Tung Univ. and 2UMC (Taiwan)

Area 4: Advanced Memory Technology

(6 Papers)

PS-4-1 Effects of Rapid-Thermal Annealing on Resistive Switching of ZnO/Ti/ZnO RRAM Deposited on Flexible PEN Substrate C. L. Lin1, Y. H. Lai1, S. R. Yang1, Y. H. Yang1, C. M. Wu1, C. H. Soh1, T. Y. Lin1, C. F. Sung2 and P. C. Juan3, 1Feng Chia Univ., 2Indus. Tech. Res. Inst. (ITRI) and 3Mingchi Univ. of Tech. (Taiwan) PS-4-2 Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment Y. R. Ye1, J. C. Wnag1, J. S. Syu1, P.R. Wu1, C. S. Lai1, C. I. Wu2,3 and P. S. Wang3, 1Univ. of Chang Gung and 2Univ. of National Taiwan (Taiwan) PS-4-3 First-Principles Investigations of the Metal Doping Effects in TiO2 ReRAM L. Zhao, S. G. Park, B. Magyari Kope and Y. Nishi, Stanford Univ. (USA) PS-4-4 Improved Memory Characteristics of a Novel TATHOS-Structured Charge Trapping Memory Y. Peng, F. Liu, X. Liu, G. Du and J.Kang, Peking Univ. (China) PS-4-5 The Research for Bulk Erase Operation in Vertical 3D Cell Array Architecture G. H. Lee, Univ. of Hayang (Korea) PS-4-6 Study of Charge Retention Mechanism for DNA Memory FET S. Maeno, N. Matsuo, S. Takagi, A. Heya, T. Takada and K. Yamana, Univ. of Hyogo (Japan)

Area 5: Advanced Circuits and Systems

(16 Papers)

PS-5-1 A Multisensor Readout Circuit with a Multiplexed Pulse-signal Output R. L. Wang1, C. C. Fu1, C. M. Yen1, C. Yu1, C. Y. Yu1, C. F. Lin2, H. H. Tsai2 and Y. Z. Juang2, 1National Kaohsiung Normal Univ. and 2National Chip Implementation Center (Taiwan) PS-5-2 Side-Illuminated Color Photo Sensor T. Ariyoshi, A. Baba and Y. Arima, Kyushu Inst. of Tech. (Japan) PS-5-3 Resolution Measurement of the CMOS Image Sensor Loading Micro-lens Array for ThreeDimensional Information Acquisition M. Kobayashi, K. Suzuki, R. Ueno, H. Kwon, H. Honda and H. Funaki, Toshiba Corp. (Japan) PS-5-4 A Real-Time VLSI Recognition System With an On-Chip Adaptive K-Means Learning Algorithm Z. Hou1,3, Y. Ma2, H. Zhu3 and T. Shibata3, 1Xi'an Jiaotong Univ., 2Tohoku Univ. and 3Univ. of Tokyo (China) PS-5-5 A Ramp-wave Generator with Interleaved DACs for Single-slope ADC D. Uchida, M. Ikebe, J. Motohisa and E. Sano, Univ. of Hokkaido (Japan)

PS-3-20 Analysis and Modeling of Geometry Dependent Thermal Resistances in MOSFETs X. Zhou1,2, T. Inoue1, M. Kitamura1, K. Matsuura1, M. Miyake1, T. Iizuka1, H. Kikuchihara1, M. Naito1, H. J. Mattausch1, J. He2 and M. MiuraMattausch1, 1Hirshima Univ. and 2Peking Univ. (Japan)

PS-5-6 A 3-mW/Gbps 1.8-V Current-reuse LVDS Driver with 30% Power Reduction using Vertical MOSFETs S. Tanoi1,2 and T. Endoh1,2, 1Tohoku Univ. and 2JST-CREST (Japan)

PS-3-21 The Investigation on Dislocation Edge Stress Effects for Si N-MOSFETs M. H. Liao1, C. H. Chen1, L. C. Chang1, C. Yang1, S. C. Kao1 and C. F. Hsieh2, 1National Taiwan Univ. and 2Industrial Tech. Research Inst. (Taiwan)

PS-5-7 A Dynamic Comparator Using Dynamic Currents of CMOS Logic Gates for Low-Power and High-Efficient Offset Calibration C. Masuda, T. Hirose, Y. Osaki, N. Kuroki and M. Numa, Kobe Univ. (Japan)

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Wednesday, September 26 PS-5-8 Dual Data Pulse Width Modulator for RFID Biosensor Signal Modulation B. Kim and K. Nakazato, Nagoya Univ. (Japan) PS-5-9 A Low-Power Digital Baseband Processor for Passive UHF RFID Tag with Sensor and Sensor Interface S. Yu, P. Feng, W. Liu and N. Wu, Inst. of Semiconductors, Chinese Academy of Sciences (China) PS-5-10 60 GHz Wireless Interconnection Using Electromagnetic Coupling of Open-Ring Resonators Y. Iwasaki, M. Abe, K. Hayashino, K. Fukui, J. Ao and Y. Ohno, Univ. of Tokushima (Japan) PS-5-11 A Comparison between Common-source and Cascode Topologies for 60GHz Amplifier Design in 65nm CMOS Q. Bu, N. li, K. Okada and A. Matsuzawa, Tokyo Tech. (Japan) PS-5-12 Inductorless Wideband Low Noise Amplifier with Variable Gain in 65nm CMOS D. N. S. Dharmiza1,2, H. Ito1, N. Ishihara1 and K. Masu1, 1Tokyo Tech. and 2Univ. Malaysia Sarawak (Japan) PS-5-13 ESD Protection Design for V-band Low-Noise Amplifier Using RF Junction Varactors M. H. Tsai, S. K. Huang and S. Hsu, National Tsing Hua Univ. (Taiwan) PS-5-14 A Simple and Useful Layout Scheme to Improve the CDM Robustness for the Input Buffer T. C. Kao1, J. H. Lee2, C. H. Lien3, C. W. Chiu4 and H. D. Su5, 1Univ. of Tsing Hua, 2Corp. of Richtek Tech., 3Univ. of Tsing Hua, 4Corp. of Richtek Tech. and 5Corp. of Richtek Tech. (Taiwan)

PS-6-6 AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact O. Seok1, W. Ahn1, Y. Kim1, M. Ha2 and M. Han1, 1Seoul Nat'l Univ. and 2Korea Electron. Tech. Inst. (Korea) PS-6-7 GaN-based Metal-Semiconductor-Metal Photodetectors Fabricated on Patterned Sapphire Substrates K. T. Liu1, S. J. Chang2, Sean Wu3 and Y. S. Chang4, 1Univ. of Cheng Shiu, 2Univ. of National Cheng Kung, 3Univ. of Tung-Fang Design and 4Univ. of National Formosa (Taiwan) PS-6-8 Temperature Effect on Electrical Properties of HfInZnO Amorphous Oxide Thin Film Transistor J. S. Chang, J. H. Kim, D. W. Kwon and B. G. Park, Natl. Univ. of Seoul (Korea) PS-6-9 High Performance Dual-Layer Channel ZnO Thin Film Transistor Y. F. Geng1,2, D. D. Han1, J. Cai1, W. Wang1, L. L. Wang1, Y. Tian1, H. K. Yao1, L. X. Qian3, Y. Wang1 and S. D. Zhang2, 1Peking Univ., 2Shenzhen Graduate School of Peking Univ. and 3Beijing Inst. of Tech. (China) PS-6-10 Investigation of Trapping Properties in AlGaN/GaN HEMT Heterostructures Grown on Silicon with Thick Buffer Layers J. Freedsman, T. Kubo and T. Egawa, Nagoya Inst. of Tech., Research center for nano device and system (Japan) PS-6-11 Effects of Annealing Method on the Electrical Characteristics of Solution-Processed InGaZnO Metal-Point-Contact Transistor S. W. Lee, Y. H. Hwang and W. J. Cho, Univ. of Kwangwoon (Korea)

PS-5-15 Impact on Delay due to Random Telegraph Noise Under Low Voltage Operation in Logic Circuits S. Nishimura1, T. Matsumoto1, K. Kobayashi2,3 and H. Onodera1,3, 1Kyoto Univ., 2Kyoto Inst. Tech. and 3 JST CREST (Japan)

PS-6-12 Fabrication of AlGaN/GaN HEMTs with Slant Field Plates by Using Deep-UV Lithography H. C. Wang, Y. C. Lin, C. C. Chang, H. T. Hsu, T. E. Shie, L. C. Huang, C. C. Chung and E. Y. Chang, National Chiao-Tung Univ. (Taiwan)

PS-5-16 (Late News) Wide Dynamic Range Active Pixel Sensor Using a High-Sensitivity Gate/Body-Tied Photodetector with an Overlapping Control Gate S. H. Jo, M. Bae, M. Lee, J. Y. Kim, P. Choi and J. K. Shin, Univ. of Kyungpook National (Korea)

PS-6-13 Enhancement of RF Characteristics of AlGaN/GaN HEMTs with Shield Source Field Plate using BCB M. Lee1, Y. M. Ryoo1, N. Lee1, H. Y. Cha2 and K. Seo1, 1Univ. of Seoul National and 2Univ. of Hongik (Korea)

Area 6: Compound Semiconductor Electron Devices and Related Technologies (24 Papers) PS-6-1 Polycrystalline ZnO Mott-Barrier Diodes Z. J. Liu, H. W. Huang, J. Y. Gan and T. R. Yew, National Tsing-Hua Univ. (Taiwan) PS-6-2 Effects of in Situ Surface Passivation of AlGaN/GaN MOS-HEMT: A Simulation Study P. Somasuntharam, X. Liu, Y. C. Yeo and L. S. Tan, National Univ. of Singapore (Singapore) PS-6-3 Comparison of Noise and Power Characteristics of Single- and Dual-Gate AlGaAs/InGaAs pHEMTs C. C. Hu1,2, S. H. Lin2, D. M. Lin3, C. C. Huang4, Y. M. Hsin2, C. K. Lin5, Y. C. Wang5 and Y. J. Chan6, 1 Chung-Shan Inst. of Sci. and Tech., 2National Central Univ., 3Taiwan Semiconductor Manufac. Corp., 4 Yuan Ze Univ., 5Win Semiconductors Corp. and 6Indus. Tech. Res. Inst. (Taiwan) PS-6-4 Microwave Performance of InGaAs MOSFET with InP Interfacial Layer H. D. Chang1, B. Sun1, L. Lu1, G. M. Liu1, W. Zhao1, W. X. Wang2 and H. G. Liu1, 1Inst. of Microelectronics of Chinese Academy of Sciences and 2Inst. of Physics of Chinese Academy of Sciences (China) PS-6-5 Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato, Hokkaido Univ. (Japan)

PS-6-14 Normally-Off Recessed AlGaN/GaN MOSHFETs Using ICPCVD SiO2 B. R. Park1, J. G. Lee1, I. H. Min2, K. S. Seo2 and H. Y. Cha1, 1Hongik Univ. and 2Seoul National Univ. (Korea) PS-6-15 Power Schottky Barrier Diodes with Improved Schottky Contacts on AlGaN/GaN Heterostructures N. Jeon1, W. Choi1, I. Min1, H. Cha2 and K. Seo1, 1Seoul National Univ. and 2Hongik Univ. (Korea) PS-6-16 AlGaN MSM Photo Sensors with AlN/SiN Nucleation Layers C. H. Chen, M. H. Yang, W. C. Lin and C. M. Tsai, Cheng Shiu Univ. (Taiwan) PS-6-17 Electric- Field-Driven Degradation in Off-State Step-Stressed HfO2/AlGaN/GaN Metal-OxideSemiconductor HFETs J. Park1, J. H. Shin1, H. J. Kim2, K. C. Kim1 and T. Jang1, 1LG Electronics Corp. and 2Hanyang Univ. (Korea)

PS-6-20 Influence of in Situ N2 Plasma Pretreatment on the SiN Prepassivation of AlGaN/GaN HEMT S. G. Han, Y. H Oh, M. Lee, D. Kim and K. Seo, Seoul National Univ. (Korea) PS-6-21 Analysis on Trade-Off between Electric Field and Gate-Drain Capacitance for GaN HEMT by T-CAD Simulation Y. Yamaguchi1, K. Hayashi1, T. Oishi1, H. Otsuka1, K. Yamanaka1, M. Nakayama1 andY. Miyamoto2, 1 Mitsubishi Electric Corp. and 2Tokyo Tech. (Japan) PS-6-22 (Late News) Nitrogen Passivation and Chemical Trends of Defects at Al2O3:GaAs/InAs/InP/GaSb Interfaces J. Robertson, Y. Guo and L. Lin, Cambridge Univ. (UK) PS-6-23 (Late News) High Breakdown Voltage and Low Thermal Effect Micromachined SOI AlGaN/GaN HEMTs H. C. Chiu and C. W. Yang, Chang Gung Univ. (Taiwan) PS-6-24 (Late News) Depth-Resolved Electronic Structure Analysis of IGZO/SiO2 Interface by Two-Dimensional Photoelectron Spectroscopy Y. Ueoka, F. Matsui, N. Maejima, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon and Y. Uraoka, Nara Inst. of Sci. and Tech. (Japan)

Area 7: Photonic Devices and Optoelectronic Integration

(26 Papers)

PS-7-1 Low-Loss Polycrystalline Silicon Waveguides for High-Efficiency Optical Modulator T. Horikawa1,2, M. Takahashi1,2, J. Fujikata1,3, S. Takahashi1,3, T. Akagawa1,3, M. Noguchi1,3 and N. Yamamoto1,2, 1PECST, 2AIST and 3PETRA (Japan) PS-7-2 Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs L. Zhang1, M. Ikezawa1, T. Mori1, S. Umehara1, Y. Sakuma2, K. Sakoda2 and Y. Masumoto1, 1Univ. of Tsukuba and 2National Inst. for Materials Science (Japan) PS-7-3 Fabrication of Backside-Illuminated CMOS Compatible Photodiode for Optoelectronic Integrated Circuits S. B. Shin, H. Okada, H. Sekiguchi and A. Wakahara, Toyohashi Univ. of Tech. (Japan) PS-7-4 Epitaxial Re-growth for Advanced GaAs Based Laser Devices B. J. Stevens, K. M. Groom, D. T. D. Childs, J. S. Roberts, R. J. Taylor, D. M. Williams and R. A. Hogg, Univ. Sheffield (UK) PS-7-5 Proposal of Electro-Optic Tunable 1x2 Multimode Interference Splitter Based on Multiple Quantum Well K. Kashima and T. Arakawa, Yokohama National Univ. (Japan) PS-7-6 A 256-configuration-context MEMS Optically Reconfigurable Gate Array Y. Yamaji and M. Watanabe, Shizuoka Univ. (Japan) PS-7-7 Proposal of All-Optical Active Microring Logic Gate H. Yajima, M. Nishimura, T. Arakawa and Y. Kokubun, Yokohama National Univ. (Japan)

PS-6-18 Interface Analysis of AlN/InAs(001) and AlN/Ge/InAs(001) by Angle-Resolved X-ray Photoelectron Spectroscopy M. Kudo, H. A. Shih and T. Suzuki, JAIST (Japan)

PS-7-8 Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki-Paoli Method F. Tanoue1,2, H. Sugawara1, K. Akahane2 and N. Yamamoto2, 1Tokyo Metropolitan Univ. and 2National Inst. of Info. and Communications Tech. (Japan)

PS-6-19 Low Frequency Noise Analysis of ZnO TFTs under the Positive Gate Bias Stress K. S. Jeong1, Y. M. Kim1, H. J. Yun1, S. D. Yang1, S. Y. Lee1, Y. S. Kim2, H. D. Lee1 and G. W. Lee1, 1 Univ. of Chung-nam National and 2National Nanofab Center (Korea)

PS-7-9 Superluminescent Emission of a Novel Semiconductor Diode with Double Ring Cavities and a Y-junction Coupler M. C. Shih, Y. C. Sun, Y. Y. Lin and W. H. Lan, National Univ. of Kaoshiung (Taiwan)

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Wednesday, September 26 PS-7-10 SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes M. H. Liao1, C. H. Chen1, L. C Chang1, C. Yang1, S. C. Kao1 and C. F. Hsieh2, 1National Taiwan Univ. and 2Industrial Tech. Research Inst. (Taiwan) PS-7-11 Visible-Blind Solid-Liquid Heterojunction Ultraviolet Photodetector Based on An Aactive Layer of TiO2 Nanorod Array Grown by Hydrothermal Process W. J. Lee1, M. H. Lee1, J. C. Tsai1 and J. H. Lee2, 1National Cheng Kung Univ. and 2Indus. Tech. Res. Inst. (Taiwan) PS-7-12 Room Temperature Excitonic Electroabsorption Effect for High-Speed and Low-Driving Voltage Spatial Light Modulators M. S. Kayastha, D.P. Sapkota, M. Takahashi and K. Wakita, Chubu Univ. (Japan) PS-7-13 Sensitization Effect of 1.53 um Er3+-related Emission in ErxYbyY2-x-ySiO5 Crystal-line Thin Film Fabricated by Directed Self-assembly Using Layer-by-layer Deposition F. Jing1, T. Shinagawa1, T. Nakajima1, T. Sugawara2, Y. Jiang2, T. Kimura1 and H. Isshiki1, 1Univ. of Electro-Communications and 2Shincron Co. Ltd. (Japan) PS-7-14 Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer T. Amano1,2, S. Ukita1,2, L. Ma1,2, M. Aoyogi1,2 and K. Komori1,2, 1Photonics Electronics Tech. Research Association (PETRA) and 2National Inst. of Advanced Industrial Science and Tech. (AIST) (Japan) PS-7-15 Highly Light-Collection Efficiency Based on Multi-Beam Diffractions from GaN-Based MicroCavity Light-Emitting Diodes with Photonic Crystals Y. C. Chu1,3, Y. K. Su1,2, C. H. Chao3, M. H. Wu3 and W. Y. Yeh3, 1National Cheng Kung Univ., 2KunShan Univ. and 3Industrial Tech. Research Inst. (Taiwan) PS-7-16 Luminescence Properties of Rare Earth-Doped Thiosilicate Phosphors on Silicon Substrate Y. Nanai, Y. Sakamoto and T. Okuno, The Univ. of Electro-Communications (Japan) PS-7-17 Investigation of the Thermal Characteristics with the Conformal and Remote Phosphor Structures in White Light-emitting Diodes K. J. Chen1, H. C. Chen1, M. H. Shih2, C. H. Wang1, H. T. Kuo1, H. H. Tsai1, M. Y. Kuo2, S. H. Chien1, C. C. Lin3, C. J. Pan4 and H. C. Kuo1, 1Univ. of National Chiao-Tung, 2Academia Sinica, 3Univ. of National Chiao-Tung and 4HELIO Optoelectronics Corp. (Taiwan)

PS-7-24 Light Extraction Enhancement of GaN-based Light Emitting Diodes Using Crown Shaped Patterned Sapphire Substrates C. Y. Liu1, C. H. Chiu1, C. C. Lin1, C. Y. Lee1, B. W. Lin2, W. C Hsu2, G. C. Chi1, H. C. Kuo1 and C. Y. Chang1, 1National Chiao-Tung Univ. and 2Sino-American Silicon Products Inc. (Taiwan) PS-7-25 PZT Optical Waveguide on Silicon Substrate T. Maruyama, S. Ebuchi, M. Matsumoto and K. Iiyama, Univ. of Kanazawa (Japan) PS-7-26 (Late News) Extraordinary Incident Angle Dependence of External Quantum Efficiency in SOI Photodiode with Silver Line-and-Space Grating H. Satoh, K. Kawakubo, A. Ono and H. Inokawa, Shizuoka Univ. (Japan)

Area 8: Advanced Material Synthesis and Crystal Growth Technology

PS-8-12 Sputtered Pb(Zr,Ti)O3 Piezoelectric Films for MEMS Application H. Kobayashi, M. Hirose, I. Kimura and K. Suu, ULVAC Inc. (Japan) PS-8-13 High-performance High-k SmTiO3 Gate Dielectrics for Amorphous InGaZnO Thin-film Transistor Applications F. H. Chen1, M. N. Hung1, H. Y. Chen1, J. H. Liu1, J. L. Her1, Y. H. Matsuda2 and T. M. Pan1, 1Chang Gung Univ. and 2Univ. of Tokyo (Taiwan) PS-8-14 Carbon Atom Reactions in CVD Graphene Growth on Nickel: A Theoretial Study N. Tajima and T. Ohno, National Inst. for Materials Science (Japan)

(14 Papers)

PS-8-1 N-H Defect Formation Mechanism in GaAsN Grown by Chemical Beam Epitaxy K. Ikeda, S. Wada, M. Inagaki, N. Kojima, Y. Ohshita and M. Yamaguchi, Toyota Technological Inst. (Japan) PS-8-2 Direct Growth of Epitaxial In-rich InxAl1-xN Ternary Alloys on Si(111) Substrate by RFMOMBE W. C. Chen, Y. H. Wu, J. S. Tian, T. C. Yen, P. Y. Lin, J. Y. Chen and L. Chang, National Chiao Tung Univ. (Taiwan) PS-8-3 Near infrared ZnCdO:(Mg, In, N) films by RPE-MOCVD M. Suzuki, S. K. Mohanta, A. Nakamura and J. Temmyo, Research Inst. of Electronics, Shizuoka Univ. (Japan) PS-8-4 Chemical Synthesis of ZnS Nanoflowers Using Biomolecule and Optical Properties A. Silambarasan1, H. P. Kavitha1, S. Ponnusamy1, M. Navaneethan2 and Y. Hayakawa2, 1SRM Univ. and 2Shizuoka Univ. (India)

PS-7-18 Guided Mode Emission Characteristics of GaN-based Ultrathin-film Micro-light-emitting Diodes with Photonic Crystals C. F. Lai, Feng Chia Univ. (Taiwan)

PS-8-5 Hydrothermal Growth of 3 Dimensional Porous ZnO Nanoflowers and Functional Properties M. Navaneethan, J. Archana, M. Arivanandhan, T. Koyama and Y. Hayakawa, Shizuoka Univ. (Japan)

PS-7-19 A GaAs/Air Multilayer Cavity for a Planar-type Non-linear Optical Device H. Komatsu1, Z. Zhang1, Y. Nakagawa1,2, K. Morita1, T. Kitada1 and T. Isu1, 1Univ. of Tokushima. and 2 NICHIA Corp. (Japan)

PS-8-6 Optical and Electrical Properties of ReSe2:Au and ReSe2:Ag Y. C. Jian1, D. Y. Lin1 and Y. S. Huang2, 1Changhua Univ. of Edu. and 2Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-7-20 Analysis of Coherent Coupling in High-Mesa Directional Coupler H. Kamiya, T. Nagata, Y. Ueyama, T. Makino, T. Arakawa and Y. Kokubun, Yokohama National Univ. (Japan)

PS-8-7 A Comprehensive Study on the Optical Properties of Thin ReS2:Au Layered Single Crystals D. Y. Lin1, C. C. Huang1 and Y. S. Huang2, 1Changuha Univ. of Edu. and 2Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-7-21 Effect of Absorption Region in 850-nm Si Avalanche Photodiodes by Standard CMOS Technology Z. Y. Li, F.P Chou, Y. C. Hsieh and Y. M. Hsin, National Central Univ. (Taiwan)

PS-8-8 Packaging Organic Light Emitting Diode with Surface Self-cleaning Using a Highly Active Amorphous Titanium Oxide Photocatalytic Thin Film Y. S. Lu1, Y. C. Lin1, L. W. Lai2, S. C. Hong1 and D. S. Liu1, 1National Formosa Univ. and 2Indus. Tech. Res. Inst. (Taiwan)

PS-7-22 Light Extraction Improvement of Flip Chip Light Emitting Diodes Using Diffused Nanorod Reflector C. T. Lee1, C. Y. Chuang1 and C. H. Chao2, 1National Cheng Kung Univ. and 2Indus. Tech. Res. Inst. (Taiwan)

PS-8-9 Photoluminescence Enhancement from β-FeSi2 on Ag-coated Si K. Akiyama1, M. Itakura2 and H. Funakubo3, 1Kanagawa Indus. Tech. Center, 2Kyusyu Univ. and 3 Toyko Tech. of Tech. (Japan)

PS-7-23 Over 1.5 μm Deep Dry Etching of Al-rich AlGaAs for Photonic Crystal Fabrication Y. Kitabayashi, M. Mochizuki, F. Ishikawa and M. Kondow, Osaka Univ. (Japan)

PS-8-10 Fast Crystallization of Ge Nanodot Array on Si Substrate by Local Pressure Method T. W. Liao, H. M. Chen and C. H. Kuan, National Taiwan Univ. (Taiwan)

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PS-8-11 Inhibition Effect of SiOx Formation and Modulation of Charge State at SrO/Si(100) Interface Synthesized by Pulsed Laser Deposition Y. Hotta and S. Satoh, Univ. of Hyogo (Japan)

Area 9: Physics and Applications of Novel Functional Devices and Materials (13 Papers) PS-9-2 Effect of Coulomb Interaction in Electron Wave Packet Dynamics in Nanoscale Devices T. Shiokawa1, Y. Takada2, S. Konabe1, M. Muraguchi3, T. Endoh3, Y. Hatsugai1 and K. Shiraishi1, 1Univ. of Tsukuba, 2Tokyo Univ. of Sci. and 3Tohoku Univ. (Japan) PS-9-3 Non-linear and Non-planar Free Thermal Vibration of SWNT in Molecular Dynamic Simulation H. Y. Koh, J. Cannon, S. Chiashi, J. Shiomi and S. Maruyama, Univ. of Tokyo (Japan) PS-9-4 Electron Focusing Effect in Ballistic Graphene Cross Junction M. Onuki1, S. Masubuchi1, T. Yamaguchi1, K. Watanabe2, T. Taniguchi2 and T. Machida1,3, 1Univ. of Tokyo, 2National Inst. of Material Science and 3Japan Sci. and Tech. Agency (Japan) PS-9-5 Magnetic Commensurability Effect in Ballistic Graphene S. Morikawa1, S. Masubuchi1, K. Iguchi1, M. Onuki1, T. Yamaguchi1, M. Arai1, K. Watanabe2, T. Taniguchi2 and T. Machida1,3, 1Univ. of Tokyo, 2National Inst. of Material Science and 3Japan Sci. and Tech. Agency (Japan) PS-9-6 Resistance Switching Memory Characteristics of Si/CaF2/CaF2 Quantum-well Structures Grown on Metal (CoSi2)Layer J. Denda, K. Uryu and M. Watanabe, Toyko Tech. of Tech. (Japan) PS-9-7 Nanogap ReRAM Based on Natural Aluminum Oxide T. Miyabe and T. Nakaoka, Sophia Univ. of Tokyo (Japan) PS-9-8 Quantum Size Effects on Phonon Transport in Ge Quantum Dot/SiO2 System C. C. Wang, J. Y. Chiou, J. C. Hsu, M. T. Hung, H. T. Chang, S. W. Lee and P. W. Li, National Central Univ. (Taiwan) PS-9-9 Electron Spin Lifetime in Pnpn-Structured GaAs T. Ito1, H. Sugata2, S. Tanigaki2, M. Ichida2 and H. Ando2, 1Shizuoka Univ. and 2Konan Univ. (Japan) PS-9-10 Spin-Canting Mediated Metallic State in Lightly Electron-Doped CaMnO3 H. Ohnishi1,3, S. Ishibashi1,3 and K. Terakura1,2,3, 1AIST, 2JAIST and 3JST-CREST (Japan) PS-9-11 Theoretical Examination on Significantly Low Off-State Current of a Transistor Using Crystalline In-Ga-Zn Oxide M. Murakami, K. Kato, K. Inada, T. Matsuzaki, Y. Takahashi and S. Yamazaki, Semiconductor Energy Laboratory Co., Ltd. (Japan)

Wednesday, September 26 PS-9-12 Silicon-based Floating-body Synaptic Transistor H. Kim1, J. H. Lee1, G. Kim1, M. C. Sun1,2 and B. G. Park1, 1Seoul National Univ. and 2Samsung Electronics Corp. Ltd. (Korea)

PS-10-11 Localized Surface Plasmon Resonance Sensor Based on Silver Nanoprisms Coated with Alkylthiol Monolayers K. Sugawa, T. Ichikawa and D. Tanaka, Nihon Univ. (Japan)

PS-11-8 Realization of Drosophila Gustatory Receptor Based Ion-Sensitive Field-Effect Transistors T. E. Bae1, H. J. Jang1, H. C. Lau3, J. Y. Kwon2, J. O. Lim3 and W. J. Cho1, 1Univ. of Kwangwoon, 2 Univ. of Sungkyunkwan and 3Univ. of Kyungpook National (Korea)

PS-9-13 Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO3 thin film S. Asanuma1,2, P. H. Xiang1,2, H. Yamada1, H. Sato1,2, I. H. Inoue1,2, H. Akoh1,2, A. Sawa1,2, K. Ueno3,4, M. Kawasaki3,5 and Y. Iwasa3,5, 1AIST, 2JST-CREST, 3Univ. of Tokyo, 4JST-PRESTO and 5CERG Riken (Japan)

PS-10-12 White polarized Electroluminescence Devices Based on α-Sexithiophene Deposited on Oriented β-phase Polyfluorene C. Heck1, T. Matsumoto1,2, T. Mizokuro1, H. Aota2 and N. Tanigaki1, 1National Inst. of Advanced Indus. Sci. and Tech. (AIST) and 2Kansai Univ. (Japan)

PS-9-14 (Late News) Transport Spectroscopy of Field-induced Quantum Confinement in Graphene S. Moriyama1, Y. Morita2, E. Watanabe1 and D. Tsuya1, 1NIMS and 2Gunma Univ. (Japan)

PS-10-13 Effects of Perfluoroalkyl Chain Lengths Introduced to Buckminsterfullerene Derivatives on Their Field-Effect Transistor Performances M. Karakawa1, T. Nagai2, K. Adachi2, Y. Ie1 and Y. Aso1, 1ISIR, Osaka Univ. and 2Chemical R&D Center, Daikin (Japan)

PS-11-9 Signal Enhancement of Human IL5 Immunoassay by Enzyme Catalyzed Ag Reduction Beyond Limit of Debye Screening Length on Ion-Sensitive Field Effect Transistors H. J. Jang1, J. Y. Ahn2,3, T. E. Bae1, Y. B. Shin2,3, M. G. Kim4 and W. J. Cho1, 1Univ. of Kwangwoon, 2 Univ. of Science and Tech., 3Korea Research Inst. of Bioscience and BioTech. and 4Gwangju Inst. of Science and Tech. (Korea)

Area 10: Organic Materials Science, Device Physics, and Applications (16 Papers) PS-10-1 Preparation of a Functionally Graded Fluoropolymer Thin Film and its Application to Antireflective Coating S. Kazuo1,2, T. Matsuda1, T. Kawanishi1, K. Tanaka1 and H. Usui1, 1Tokyo Univ. Agricul. & Technol. and 2Micro Engineering Inc. (Japan) PS-10-2 Impact of Illumination on the Charge Injection and Accumulation in Organic Transistors K. Lee1, M. Weis2, X. Chen1, D. Taguchi1, T. Manaka1 and M. Iwamoto1, 1Tokyo Inst. of Tech. and 2Slovak Univ. of Tech. (Japan) PS-10-3 Fabrication and Characteristics of Field-Effect Transistors having Pentacene/Vanadium Pentoxide Co-evaporated Layer M. Minagawa1, S. Usuba2, A. Baba2, K. Shinbo2, K. Kato2 and F. Kaneko2, 1Nagaoka National College of Tech. and 2Niigata Univ. (Japan) PS-10-4 Effects of the Polymer Molecular Weight in Organic Resistive Memory Using Au Nanoparticles / Polystyrene Composite Film A. Fukushima1 and K. Fujita1,2, 1Kyushu Univ. and 2IMCE (Japan) PS-10-5 Performance Enhancement of Transparent Organic Thin Film Transistors with Oxide/Metal/ Oxide Source/Drain Electrodes C. M. Wu, S. H. Su, H. L. Tsai and M. Yokoyama, Univ. of I-Shou (Taiwan) PS-10-6 Synthesis and Physical Vapor Deposition of Low-Molecular-Weight PEDOT T. Eguchi, A. Hasegawa, K. Tanaka and H. Usui, Tokyo Univ. Agricul. & Technol. (Japan) PS-10-7 Evaluation of Phthalocyanine Layer-by-layer Film Deposition Using Surface Plasmon Resonance and Optical Waveguide Spectroscopies H. Oshikane, K. Shinbo, Y. Ohdaira, A. Baba, K. Kato and F. Kaneko, Niigata Univ. (Japan) PS-10-8 Trap-controlled Transient Carrier Transport in Organic Field Effect Transistors Studied by Time-resolved Optical Second Harmonic Generation T. Manaka, Y. Tanaka, J. Takeo and M. Iwamoto, Tokyo Tech. (Japan) PS-10-9 Ultrathin PVP Formation Utilizing Evaporation Method to Improve Pentacene/HfO2 Interface Characteristics S. Ohmi1, K. Kamino1 and H. Ishiwara1,2, 1Tokyo Tech and 2Konkuk Univ. (Japan) PS-10-10 Interface Control between ITO and Hole-Transport Polymer by a Photoreactive Self-Assembled Monolayer S. H. Kim1, H. Ohtsuka1, R. C. Advincula2 and H. Usui1, 1Tokyo Univ. Agricul. & Technol. and 2Case Western Univ. (Japan)

PS-10-14 Surface Plasmon Resonance Enhanced Photocurrent Properties of Ag-loaded Titanium Dioxide Composite/Dye on Metallic Grating Surface W. Chomkitichai1,2, H. Ninsonti1,2, A. Baba1, S. Phanichphant2, K. Shinbo1, K. Kato1 and F. Kaneko1, 1 Niigata Univ. and 2Chiang Mai Univ. (Japan) PS-10-15 Photocurrent Enhancement in Porphyrin-Silver Nanoparticle Composite Films Using Nanostructures of Silver Nanoparticles R. Matsumoto, S. Yamada and H. Yonemura, Kyushu Univ. (Japan) PS-10-16 (Late News) Crystal Growth of Doped Organic Semiconductors T. Shimada, Y. Ikuta, T. Yanase and T. Nagahama, Hokkaido Univ. (Japan)

Area 11: Devices and Materials for Biology and Medicine

PS-11-10 Three-dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor: Optimization of DNA Position and Orientation Y. Nishio1, S. Uno2 and K. Nakazato1, 1Nagoya Univ. and 2Ritsumeikan Univ. (Japan) PS-11-11 Hydrogen Ion Sensing Properties of Niobium Oxide by RTA and Thickness Effect T. W. Chiang1, Y. T. Lin1, M. Y. Shin1, T. W. Juan1, T. C. Chen1, C. H. Lue4, C. S. Lai1,2,3 and C. M. Yang1,2,4, 1Department of Electronic Engineering, Chang Gung Univ., 2Healthy Aging Research Center, Chang Gung Univ., 3Center for Biomedical Engineering, Chang Gung Univ. and 4Department of Device Engineering, Inotera Memories Inc. (Taiwan) PS-11-12 Real-time Multifunctional Optical Analyzer Based on Polarization-analyzing CMOS Image Sensor for Microchemical Systems N. Wakama, N. Tachikawa, K. Terao, M. Shibata, T. Noda, K. Sasagawa, T. Tokuda, K. Kakiuchi and J. Ohta, Nara Inst. of Science and Tech. (Japan) PS-11-13 A CMOS on-chip Image Sensor with Integrated LED Array for Optogenetics T. Tokuda1,2, T. Miyatani1, Y. Sawadsaringkarn1, T. Kobayashi1, T. Noda1, K. Sasagawa1 and J. Ohta1, 1 Nara Inst. Sci. & Tech. and 2JST-PRESTO (Japan)

(16 Papers)

PS-11-1 Influence of Breast Organisms and UWB Antenna Array Configuration on the Resolution of Breast Cancer Detection T. Sugitani1, S. Kubota1, A. Toya1, X. Xiao2 and T. Kikkawa1, 1Hiroshima Univ. and 2Tianjin Univ. (Japan) PS-11-2 High Sensitive Biosensors with Slot and Stack-Type Structure using Silicon Nitride Waveguides Y. Amemiya, A. Hirowatari, T. Taniguchi, T. Ikeda, M. Fukuyama, A. Kuroda and S. Yokoyama, Hiroshima Univ. (Japan) PS-11-3 Deveopment of Novel Near-field Optical Fiber Probe Using Photonic Crystal Fiber for Highly Sensitive Fluorescence Lifetime Measurement D. Seto, Y. Taguchi, T. Saiki and Y. Nagasaka, Keio Univ. (Japan)

PS-11-14 (Late News) Wearable Capacitive Breathing Sensor S. K. Kundu, S. Kumagai and M. Sasaki, Toyota Tech. Inst. (Japan) PS-11-15 (Late News) Novel IrOx Nanodots Based Capacitive pH Sensor P. Kumar, A. Prakash, W. Banerjee and S. Maikap, Chang Gung Univ. (Taiwan) PS-11-16 (Late News) Gate Controlled Ionic Transport Nanofluidic Channel Fabricated by Silicon Planer Process K. Takahashi, J. Nishimoto, Y. Uemura, K. Atsumi, T. Hattori, M. Futagawa, K. Okumura, M. Ishida and K. Sawada, Toyohashi Univ. Tech. (Japan)

Area 12: Spintronics Materials and Devices

(12 Papers)

PS-11-4 Temperature Sensitivity of CW-PA-based Sensor Dedicated to Noninvasive Moni-toring of Physiological Parameters S. Camou, Y. Ueno and E. Tamechika, NTT MI Labs, NTT Corp. (Japan)

PS-12-1 Design of Compact Nonvolatile Lookup-Table Circuit Using Three-Terminal Magnetic-TunnelJunction-Based Single-Ended Structure D. Suzuki, Y. H. Lin, M. Natsui and T. Hanyu, Tohoku Univ. (Japan)

PS-11-5 High-resolution and High-speed Chemical Imaging Sensor Based on Optical Fiber Array K. Miyamoto, N. Kosaka, T. Wagner and T. Yoshinobu, Tohoku Univ. (Japan)

PS-12-2 Electrical Control of Magnetic Properties in Pt/Co/AlOx films T. Yang1, T. Ohashi1, J. Shiogai1, M. Kohda1,2, T. Seki3, K. Takanashi3 and J. Nitta1, 1Tohoku Univ., 2 'PRESTO, Japan Sci. and Tech. Agency and 3Inst. for Materials Res., Tohoku Univ. (Japan)

PS-11-6 Infra-Red Absorption Spectrum Measurement Combining Si Microfluidic Trench and Supercontinuum Light from Fiber S. Ohba, S. Kumagai, H. Kawashima, Y. Ohishi and M. Sasaki, Toyota Tech. Inst. (Japan) PS-11-7 High Performance Amorphous InGaZnO Based Dual-Gate Ion-Sensitive Field-Effect Transistors J. G. Gu, H. J. Jang, S. W. Lee and W. J. Cho, Kwangwoon Univ. of Seoul (Korea)

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PS-12-3 Room-temperature Spin Polarization of Epitaxial Fe3Si Films with D03-ordered Structures Estimated by Tunneling Magnetoresistance Measurements Y. Fujita, S. Yamada, S. Oki, Y. Maeda, M. Miyao and K. Hamaya, Kyushu Univ. (Japan) PS-12-4 210-ns-long Spin Relaxation of Heavily Si-doped GaInP lattice-matched to Ge Substrates T. Ishizuka1, T. Ushimi1, H. Nakata1, S. L. Lu2, J. R. Dong2 and A. Tackeuchi1, 1Waseda Univ. and 2 SINANO-CAS (Japan)

Wednesday, September 26 PS-12-5 Molecular Beam Epitaxy Growth of Co2MnSi Films on Group-IV Semiconductors M. Kawano, S. Yamada, S. Oki, K. Tanikawa, M. Miyao and K. Hamaya, Kyushu Univ. (Japan) PS-12-6 High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer A. Makarov, V. Sverdlov and S. Selberherr, Inst. for Microelectronics, TU Wien (Austria) PS-12-7 Spatial Distribution of Impurity States of Cr Atoms in (Zn,Cr)Te Studied by STM K. Kanazawa, S.Yoshida, H. Shigekawa and S. Kuroda, Graduate School of Pure and Applied Sci., Univ. of Tsukuba (Japan) PS-12-8 Charge-induced Magnetism in Si with Bi-carbon Clusters T. H. Shieh1, K. Y. Wu2, H. C. Chang3, K. M. Hung3, Y. H. Hsu3, H. T. Fan3 and Y. H. Wang1, 1Kun Shan Univ., 2National Taiwan Univ. and 3National Kaohsiung Univ. of Applied Sciences (Taiwan) PS-12-9 Structural and Magnetic Properties of Binary Compound CrTe Grown by MBE N. Sekita1, K. Yamawaki1, K. Kanazawa1, S. Kuroda1, M. Mitome2 and Y. Bando2, 1Univ. of Tsukuba and 2National Inst. for Material Science (Japan) PS-12-10 Observation of Magnetic Domain Structure in Room Temperature Ferromagnetic Semiconductor (Ti,Co)O2 S. Inoue1, T. Fukumura1 and T. Hasegawa1,2, 1Univ. of Tokyo and 2Kanagawa Academy of Sci. and Tech. (Japan) PS-12-11 (Late News) Picoseconds Carrier Spin Relaxation in In0.8Ga0.2As/AlAs/AIAs0.56Sb0.44 Coupled Double Quantum Wells R. Yamaguchi1, S. Gozu2, T. Mozume2, Y. Oyanagi1, M. Uemura1 and A. Tackeuchi1, 1Waseda Univ. and 2 AIST (Japan) PS-12-12 (Late News) Three-Terminal Electrical Spin Injection into GaAs from Perpendicularly Magnetized L10-FePt R. Ohsugi1, J. Shiogai1, M. Kohda1,2, T. Seki3, Y. Sakuraba3, M. Mizuguchi3, K. Takanashi3 and J. Nitta1, 1 Univ. of Tohoku, 2Japan Sci. and Tech. Agency and 3Inst. for Materials Res. of Tohoku Univ. (Japan)

Area 13: Application of Nanotubes, Nanowires, and Graphene (17 Papers) PS-13-1 An Analytic Circuit Model of Ballistic Nanowire MOSFET for Transient Analysis T. Numata1,4, S. Uno2,4, Y. Kamakura3,4, N. Mori3,4 and K. Nakazato1, 1Nagoya Univ., 2Ritsumeikan Univ., 3Osaka Univ. and 4JST, CREST (Japan) PS-13-2 Fabrication of Micro Hydrogen Gas Sensors by Local Anodization of Titanium Wires Y. Kimura, S. Kimura, R. Kojima and M. Niwano, Tohoku Univ. (Japan) PS-13-3 Multiple Exciton Generation in Single-walled Carbon Nanobutes S. Konabe1,2 and S. Okada1,2, 1Univ. of Tsukuba and 2CREST (Japan) PS-13-4 Electronic Properties of Carbon Nanotubes under the Electric Field A. Yamanaka and S. Okada, Univ. of Tsukuba (Japan) PS-13-5 Molecular Dynamics Simulations for Release of Sticking Carbon Nanotube Cantilever Beam Toward Nanorelay Application A. Nagataki1,2, T. Kagota1, T. Arie1 and S. Akita1, 1Osaka Pref. Univ. and 2KRI Inc. (Japan) PS-13-6 Energetics and Electronic Structures of Alkanes Adsorbed on Carbon Nanotubes K. Kamiya and S. Okada, Univ. of Tsukuba (Japan)

PS-13-7 Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Pd and Ti Overlayer Doping S. Ishii1,2, M. Tamaoki1, S. Kishimoto1,2 and T. Mizutani1, 1Nagoya Univ. and 2Venture Business Lab., Nagoya Univ. (Japan) PS-13-8 First Principles Calculations for Diffusion Barriers of Lithium Intercalation into Graphite with Various Edge Terminations T. Kawai1,2, 1Smart Energy Res. Labs., NEC Corp. and 2Univ. of Tsukuba (Japan) PS-13-9 Twin-formation Suppression in FCC Epitaxial Metal Films for Graphene Growth by Spinel (MgAl2O4) Substrates K. Nozawa, N. Matsukawa and S. Yoshii, Panasonic Corp. (Japan) PS-13-10 Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors S. Aikawa1, T. Inoue1, E. Einarsson1,2, S. Chiashi1 and S. Maruyama1, 1The Univ. of Tokyo and 2GMSI, The Univ. of Tokyo (Japan) PS-13-11 Comparison of Electro-Optic Effect based Graphene Transistors G. Gupta, G. Liang and M. Bin Abdul Jalil, National Univ. of Singapore (Singapore)

PS-13-13 Edge Termination on Electrical Properties of Vertically-grown Graphene Sheets Employing N2/ H2 Mixture Plasma H. J. Cho1, H. Kondo1, K. Ishikawa1, M. Sekine1, M. Hiramatsu2 and M. Hori1, 1Nagoya Univ. and 2 Meijo Univ. (Japan) PS-13-14 Highly Sensitive Stretchable Free-standing Power Generators with Modified Graphene Electrodes J. H. Lee, K. Y. Lee, B. Kumar and S. W. Kim, Sungkyunkwan Univ. (Korea) PS-13-15 Correlation Between Electronic Properties and Structural Characteristics of Patterned Nanographene G. Rius1, M. Sansa2, X. Borrise3, F. PerezMurano2, M. Yoshimura4, O. Eryu2 and N. Mestres5, 1Nagoya Inst. Tech., 2Inst. Microelectronica de Barcelona, 3Inst. Catala de Nanotecnologia, 4Toyota Tech. Inst. and 5Inst. Ciencia Materials de Barcelona (Japan) PS-13-16 (Late News) Estimation of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi, Univ. of Tokyo (Japan) PS-13-17 (Late News) Electric-field Dependence of G-band Spectra in Bilayer Graphene Y. Yamashiro, Y. Ohno, K. Maehashi, K. Inoue and K. Matsumoto, ISIR, Osaka Univ. (Japan)

(14 Papers)

PS-14-1 Characterization of Temperature Dependence of Parasitic Diodes of SiC JFETs for Transient Thermal Resistance Measurement T. Kim and T. Funaki, Univ. of Osaka (Japan) PS-14-2 Parasitic Bipolar Effect of a Thin-film SOI Power MOSFET in High Temperature A. Uchida, Y. Morisawa and S. Matsumoto, Kyusyu Inst. of Tech. (Japan)

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PS-14-4 Photoluminescence of Dislocations in 4H-SiC Epitaxial Layers M. Nagano, I. Kamata and H. Tsuchida, Central Research Inst. of Electric Power Industry (Japan) PS-14-5 Conductivity Degradation of 4H-SiC PiN Diode with In-grown Stacking Faults A. Tanaka1, K. Nakayama1, K. Asano1, T. Miyazawa2 and H. Tsuchida2, 1Kansai Electric Power Co., Inc. and 2Central Res. Inst. of Electric Power Industry (Japan) PS-14-6 Influence of Stacking Faults and Surface Morphology in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes K. Konishi1, S. Nakata1, Y. Nakaki1, Y. Nakao1, A. Nagae1, T. Tanaka1, Y. Toyoda1, H. Sumitani2 and T. Oomori2, 1Advanced Tech. R&D Center, Mitsubishi Electric Corporation and 2Power Device Works, Mitsubishi Electric Corporation (Japan) PS-14-7 High Temperature Operation of Diamond Schottky Diodes Above 750 Degrees K. Ueda1, K. Kawamoto1, T. Soumiya1, E. Bustarret2 and H. Asano1, 1Nagoya Univ. and 2Inst. Neel, CNRS (Japan)

PS-13-12 Bias Dependent G-band Shift of Graphene in Direct Contacting with Ni T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi, Univ. of Tokyo (Japan)

Area 14: Power Devices and Materials

PS-14-3 Investigation of BTI Degradation in LDMOS Transistors Y. Ikeda, H. Mori, T. Kato, T. Uemura, M. Yoshida, M. Onoda and H. Matsuyama, Fujitsu Semiconductor Ltd. (Japan)

PS-14-8 A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction C. Y. Hung1, K. H. Lo1, C. M. Hu2, C. H. Chu2, D. C. Chang3, J. Gong4 and C. F. Huang1, 1National Tsing Hua Univ., 2TPK Touch solutions Inc., 3National Chip Implementation Center and 4Tung Hai Univ. (Taiwan) PS-14-9 LACBED Analysis of Threading Dislocation with c+a Burgers Vector in 4H-SiC Y. Sugawara1, M. Nakamori1, Y. Yao1, Y. Ishikawa1, K. Danno2, H. Suzuki2, T. Bessho2, S. Yamaguchi3, K. Nishikawa3 and Y. Ikuhara1,4, 1Japan Fine Ceramics Center, 2Toyota Motor Corp., 3Toyota Central Res. and Development Labs. Inc. and 4Univ. of Tokyo (Japan) PS-14-10 3kV-class DIMOSFET on 4H-SiC (000-1) H. Kono1,2, M. Furukawa1,2, K. Ariyoshi1,2, T. Suzuki1,2, Y. Tanaka1,3 and T. Shinohe1,2, 1R&D Partnership for Future Power Electronics Tech., 2Corporate R&D Center, Toshiba Corp. and 3National Inst. of Advanced Industrial Science and Tech. (Japan) PS-14-11 Carrier Transport Property of Heavily-Boron-Doped Degenerate Diamond Single-crystalline Thin Layers Etched with Hydrogen Plasma T. Kuki, O. Maida and T. Ito, Univ. of Osaka (Japan) PS-14-12 First Principles Study of N Incorporation Effect during SiC Oxidation S. Kato, K. Chokawa, K. Kamiya and K. Shiraishi, Univ. of Tsukuba (Japan) PS-14-13 Modeling of the Impurity-Gradient Effect in High-Voltage Laterally-Diffused MOSFETs T. Iizuka, K. Fukushima, A. Tanaka, T. Sakuda, H. Kikuchihara, M. Miyake, H. J. Mattausch and M. Miura Mattausch, Hiroshima Univ. (Japan) PS-14-14 (Late News) Stability in Multi-parallel Operation of 3.3kV SiC-SBDs A. Koyama1,2, H. Watanabe1,2, S. Nakata1,2, Y. Nakaki1,2, Y. Fujii1,2, K. Otsuka2, T. Kawakami2, M. Imaizumi2, Y. Toyoda1,2, H. Sumitani2, T. Miki1,2, Y. Nakayama2 and T. Oomori1,2, 1FUPET and 2Mitsubishi Electric Corp. (Japan)

Wednesday, September 26 Area 15: Photovoltaic Materials and Devices

(19 Papers)

PS-15-1 Optimal Si-SiGe Hetero-structure Thin-film Solar Cell with Theoretical Calculation and Quantitative Analysis M. H. Liao1, C. H. Chen1, L. C Chang1, C. Yang1, S. C. Kao1 and C. F. Hsieh2, 1National Taiwan Univ. and 2Industrial Tech. Research Inst. (Taiwan) PS-15-2 FT-IR and TPD Analysis of Ozone-Based Atomic Layer Deposited AlOx Passivation Films for Crystalline Silicon Solar Cells K. Arafune1,4, S. Yamamoto1,4, K. Urushibata1,4, S. Miki1,4, H. Yoshida1,4, A. Ogura2,4, Y. Ohshita3,4 and S. Satoh1,4, 1Univ. of Hyogo, 2Meiji Univ., 3Toyota Tech. Inst. and 4JST-CREST (Japan) PS-15-3 Fabrication of Cu2ZnSnSe4 Film Solar Cell by Sputtering-selenization S. Y. Kuo1, J. F. Yang1,2, F. I. Lai2 and C. J. Lin3, 1Univ. of Chang Gung, 2Univ. of Yuan-Ze and 3Corp. of Solar Applied Materials Tech. (Taiwan) PS-15-4 The Effects of Various Curvatures on Stainless-Steel Substates using Back Correct Layer and for CIS Films after RTP Selenization Process R. F. Shih1, W. T. Li1, W. S. Peng1, T. T. Li1, S.H. Chen1, C. C. Kuo1, S.C. Hu2, Y. T. Lu2, S. N. Hsu2 and H. C. Cheng2, 1National Central Univ. of Taoyuan County and 2Chung-Shan Inst. of Sci. & Tech. of Taoyuan County (Taiwan)

PS-15-14 Mixed Solvents for Active-Layer Morphological Modifications of Polymer Bulk Heterojunction Solar Cells T. J. Ho, Y. W. Jang, F. C. Wu and H. L. Cheng, Univ. of National Cheng Kung (Taiwan) PS-15-15 Fabrication and Characterization of Polysilane Thin Film Solar Cells J. Nakagawa, Univ. of Shiga Prefecture (Japan) PS-15-16 Influence of Absorption Property by Doping/inserting C545T in Polymer Solar Cell C. S. Ho1, W. C. Hsu1, Y. N. Lai1, E. L. Huang1, E. P. Yao1, W. M. Chen1, C. S. Lee2 and C. W. Wang3, 1 National Cheng Kung Univ., 2Feng Chia Univ. and 3National Chung Cheng Univ. (Taiwan) PS-15-17 Morphologies of Polymer-Inorganic Solar Cells Investigated by Multiscale Simulations C. K. Lee and C. W. Pao, Academia Sinica (Taiwan) PS-15-18 (Late News) Preparation of Narrow Band-gap Cu2SnS3 and Cu2Sn(S,Se)3 and Fabrication of Their Films by Printing/High-pressure Sintering Process T. Nomura, T. Maeda and T. Wada, Ryukoku Univ. (Japan) PS-15-19 (Late News) Characteristics of Flexible Organic Solar Cells Tested with Various Bending Radii D. Yeo1, M. Park1, B. Won1, J. Lee1, D. Jung1, H. Chae2, H. Kim3 and J. Yi4, 1Sungkyunkwan Univ., physics, 2Sungkyunkwan Univ., chemical Eng., 3Sungkyunkwan Univ., school of Advanced Materials Sci. and Eng. and 4Sungkyunkwan Univ., school of Info. and Communication Eng. (Korea)

PS-15-5 Influence of Density of State with Defect in Cu(In,Ga)Se2 Investigated by Photo-luminescence W. T. Lin1, F. I. Lai1, Y. K. Liao2, D. H. Hsieh2, H. C. Kuo2 and S. Y. Kuo3, 1Univ. of Yuan-Ze, 2Univ. of National Chiao Tung and 3Univ. of Chang Gung (Taiwan) PS-15-6 The Effect of Electrode Grid Pattern on Concentrated GaAs Solar Cells Efficiency C. C. Chung, C. H. Chang, H. W. Yu, H. C. Wang and E. Y. Chang, National Chiao Tung Univ. (Taiwan) PS-15-7 Built-in Electric Field Study and Optical Properties of GaInP p-i-n Solar Cells D. Y. Lin1, Y. C. He1, R. H. Horng2 and F. L. Wu2, 1National Changhua Univ. of Edu and 2National Chung Hsing Univ. (Taiwan) PS-15-8 A Study of Critical Built-in Electric Field in InGaN p-i-n Solar Cell D. Y. Lin, Changuha Univ. of Edu. (Taiwan) PS-15-9 Characterization of Pulsed Laser Deposited Bismuth Oxide Ultrathin-film Enhanced Photovoltaic Properties of InGaN Solar Cells C. F. Lai1, D. Y. Lin2, M. H. Wen2, C. K. Lin3 and M. K. Wu4, 1Feng Chia Univ., 2Academia Sinica, 3Taipei Medical Univ. and 4Academia Sinica (Taiwan) PS-15-10 Nano-textured Photonic Crystal Light-emitting Diodes and Solar Cells M. H. Liao1, C. H. Chen1, L. C. Chang1, C. Yang1, S. C. Kao1 and C. F. Hsieh2, 1National Taiwan Univ. and 2Industrial Tech. Research Inst. (Taiwan) PS-15-11 Impact of Atomic Disorder on Intermediate-Band Structures in Vertically Stacked InAs Quantum Dots H. Takahashi1 and N. Mori1,2, 1Osaka Univ. and 2CREST (Japan) PS-15-12 Solution-Processed Flexible Organic Solar Cells with a Low Temperature Annealing Active Layer W. K. Lin, S. H. Su, C. L. Huang and M. Yokoyama, Univ. of I-Shou (Taiwan) PS-15-13 Effect of Silver Nanoparticles on Photoelectric Conversion Efficiencies of P3HT/PCBM Organic Solar Cells T. Matsumoto, T. Akiyama and T. Oku, Univ. of Shiga Pref. (Japan)

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A-4: Plasmonics and Photonic Crystal Lasers (Area 7) (15:25-16:25) Chairs: J. Fujikata (PETRA) D. V. Thourhout (Ghent Univ.)

B-4: ReRAM (1) (Area 4) (15:25-16:35) Chairs: Y. C. Chen (Macronix International) M. Tada (LEAP)

C-4: Graphene Devices (Area 8&9&13) (15:25-16:55) Chairs: K. Nagashio (Univ. of Tokyo) S. Akita (Osaka Pref. Univ.)

D-4: Post-Si Technology(1) (Area 1) (15:25-16:45) Chairs: K. Kita (Univ. of Tokyo) P. Ye (Purdue Univ.)

E-4: Novel Devices (Area 3) (15:25-16:45) Chairs: M. Goto (Toshiba) F. L. Yang (NDL)

F-4: GaN Power Devices (1) (Area 6&14) (15:25-16:40) Chairs: T. Hashizume (Hokkaido Univ.) H. Y. Cha (Hongik Univ.)

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15:25 A-4-1 (Invited) Plasmonic EM absorbers and photothermal effects M. Qiu1,2, X. Chen2, Y. Chen2 and M. Yan2, 1Zhejiang Univ. (China) and 2Royal Inst. of Tech. (KTH) (Sweden)

15:25 B-4-1 (Invited) Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte H. Hada, T. Sakamoto, M. Tada, N. Banno, M. Miyamura, K. Okamoto, N. Iguchi and T. Nohisa, Low-power Electronics Association & Project (Japan)

15:25 C-4-1 (Invited) Progress and challenges in large-scale graphene technology for RF applications S. J. Han, IBM T. J. Watson Research Center (USA)

15:25 D-4-1 (Invited) Basic issues on alternative channel materials for Post-Si logic devices: from high mobility semiconductors to two dimensional atomic layers A. Molle, CNR-IMM (Italy)

15:25 E-4-1 A Physics-Based Compact Model of TunnelFETs Considering Nonlocal Effects K. Fukuda, T. Mori, W. Mizubayashi, Y. Morita, A. Tanabe, M. Masahara, T. Yasuda, S. Migita and H. Ota, GNC, AIST (Japan)

15:25 F-4-1 (Invited) Polarization Junction based Super HFETs and derivatives in GaN M. S. E. Narayanan1, A. Nakajima1,2, H. Kawai3, Y. Sumida3, V. Unni1 and M. Dhyani1, 1Univ. of Sheffield (UK), 2National Inst. of Advanced Industrial Science and Tech. (Japan) and 3Powdec, KK. (UK)

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15:55 A-4-2 Room temperature lasing in metal-coated GaN by grating structure W. H. Hsu1, M. H. Shih2 and H. C. Kuo1, 1Univ. of National Chiao-Tung and 2Academia Sinica (Taiwan)

15:55 B-4-2 Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories G. Palma1, E. Vianello1, G. Molas1, C. Cagli1, F. Longnos2, J. Guy1, M. Reyboz1, C. Carabasse1, M. Bernard1, F. Dahmani2, D. Bretegnier2, J. Liebault2 and B. De Salvo1, 1CEA, LETI, MINATEC Campus and 2Altis Semiconductor (France)

15:55 C-4-2 Room Temperature On-Off Operation of Current in He Ion Irradiated Graphene Sheet S. Nakaharai1, T. Iijima2, S. Ogawa3, S. Suzuki1, S. Li4, H. Miyazaki4, K. Tsukagoshi4, S. Sato1 and N. Yokoyama1, 1GNC-AIST, 2ICAN-AIST, 3NRI-AIST and 4MANA-NIMS (Japan)

15:55 D-4-2 High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain T. Sada, K. Yamamoto, H. Yang, D. Wang and H. Nakashima, Kyushu Univ. (Japan)

15:45 E-4-2 Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, M. Masahara and H. Ota, GNC-AIST (Japan)

15:55 F-4-2 Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si S. M. Cho, E. J. Hwang, J. M. Kim, J. H. Kim, J. H. Shin, J. Park, Y. J. Jo, W. S. Kim, H. J. Lee, K. Kim and T. Jang, LG Electronics (Korea)

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16:10 A-4-3 Wavelength Fine-tuning of Photonic Crystal Rods Laser on a Flexible Substrate K. T. Lai1,2, M.Y . Kuo1, K. S. Hsu1,2, C. T. Lin2 and M. H. Shih1,2, 1Academia Sinica and 2National Chiao Tung Univ. (Taiwan)

16:15 B-4-3 Optimization of Conductive Filament of Oxidebased RRAM for Low Operation Current by Stochastic Simulation P. Huang, Y. X. Deng, B. Gao, B. Chen, F. F. Zhang, D. Y, L. F. Liu, G. Du, J. F. Kang and X. Y. Liu, Peking Univ. (China)

16:10 C-4-3 Top-gated graphene FET with Y ₂ O ₃ for quantum capacitance estimation K. Nagashio, T. Nishimura and A. Toriumi, Univ. of Tokyo (Japan)

16:15 D-4-3 High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization W. Takeuchi1, N. Taoka1, M. Kurosawa1,2, M. Fukutome1, M. Sakashita1, O. Nakatsuka1 and S. Zaima1, 1 Nagoya Univ. and 2JSPS (Japan)

16:05 E-4-3 First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction K. Tomioka1,2, M. Yoshimura1 and T. Fukui1, 1Hokkaido Univ. and 2JST-PRESTO (Japan)

16:10 F-4-3 AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process X. Liu1, C. Zhan1, K. W. Chan2, W. Liu3, D. Z. Chi4, L. S. Tan1, K. J. Chen2 and Y. C. Yeo1, 1National Univ. of Singapore, 2Hong Kong Univ. of Sci. and Tech., 3Nanyang Technological Univ. and 4Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. (Singapore)

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16:25 C-4-4 Efficient Reduction and Restoration of Graphene oxide films as a Channel in Field Effect Transistor: Toward Sensor applications R. Negishi1, K. Kuramoto1, Y. Ohno1, T. Nishino2,3, T. Yamaguchi2, K. Maehashi1, K. Matsumoto1, K. Ishibashi2 and Y. Kobayashi1, 1Univ. of Osaka, 2 RIKEN and 3Sanwa Corp. (Japan)

16:35 D-4-4 Aluminum Nitride for Ge-MIS Gate Stacks with Scalable EOT T. Tabata1,2, C. H. Lee1,2, T. Nishimura1,2, K. Nagashio1,2 and A. Toriumi1,2, 1Univ. of Tokyo and 2 JST-CREST (Japan)

16:25 E-4-4 Sub-10-nm nano-sheet channel of Junctionless Poly-Si TFT with oxidation thinning method Y. C. Cheng1, H. B. Chen2, J. J. Wu2, M. H. Han2, Y. C. Wu1 and C. Y. Chang2, 1Univ. of National Tsing Hua and 2Univ. of National Chiao Tung (Taiwan)

16:25 F-4-4 Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/ GaN HFETs K. Tanaka, M. Ishida, T. Ueda and T. Tanaka, Panasonic Corp. (Japan)

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Coffee Break A-5: Photonic Crsytals (Area 7) (17:05-18:05) Chairs: A. Wakahara (Toyohashi Univ. of Technology) J. Liu (Thayer School of Engineering Dartmouth College)

B-5: ReRAM (2) (Area 4) (17:05-18:20) Chairs: K. Ishihara (Sharp) T. Endoh (Tohoku Univ.)

C-5: Graphene Growth (1) (Area 8&9&13) (17:05-18:20) Chairs: K. Maehashi (Osaka Univ.) S. Sato (AIST)

D-5: Post-Si Technology(2) (Area 1) (17:20-18:20) Chairs: T. Nabatame (NIMS) S. Tsujikawa (SONY)

E-5: Mobility Enhancement (Area 3) (17:05-18:25) Chairs: S. Yamaguchi (SONY) F. Boeuf (STMicroelectronics)

F-5: GaN Power Devices (2) (Area 6&14) (17:05-18:20) Chairs: T. Tanaka (Panasonic) C. F. Huang (Tsing Hua Univ.)

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17:05 A-5-1 (Invited) Ultrafast directly modulated single-mode photonic crystal nanocavity light-emitting diode G. Shambat1, B. Ellis1, A. Majumdar1, J. Petykiewicz1, M. Mayer2, T. Sarmiento1, J. Harris1, E. Haller2 and J. Vuckovic1, 1Electrical engineering department, Stanford Univ. and 2Department of of Materials Science, Univ. of California (USA)

17:05 B-5-1 Switching Model of TaOx-based Non-polar Resistive Random Access Memory X. Tong1, W. Wu1, Z. Liu1, X. A. Tran2, H. Y. Yu3 and Y. C. Yeo1, 1National Univ. of Singapore, 2Nanyang Tech. Univ. and 3South Univ. of Sci. and Tech. (Singapore)

17:05 C-5-1 Dependence of field effect mobility of CVD graphene on its grain size K. Yagi1, A. Yamada1, K. Hayashi1, N. Harada1, M. Tsukahara2, S. Ogawa3, S. Sato1 and N. Yokoyama1, 1 GNC-AIST, 2ICAN-AIST and 3NRI-AIST (Japan)

17:20 D-5-1 Dry Oxidation of Germanium (100) and (111) Surfaces - Impact of Oxidation Temperature on Ge Oxide Growth A. Ohta1, S. K. Sahari1, M. Ikeda1, H. Murakami1, S. Higashi1 and S. Miyazaki2, 1Hiroshima Univ. and 2 Nagoya Univ. (Japan)

17:05 E-5-1 Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms T. Ohashi1, T. Takahashi1, T. Kodera2, S. Oda2 and K. Uchida3, 1Dept. of Phys. Elec., Toyko Tech. of Tech., 2QNERC, Tokyo Inst. of Tech. and 3Dept. of Elect. Eng., Keio Univ. (Japan)

17:05 F-5-1 Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT T. Katsuno, M. Kanechika, K. Itoh, K. Nishikawa, T. Uesugi and T. Kachi, Toyota Central R&D Labs. Inc. (Japan)

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G-4: Quantum Transport in Nanostructures (1) (Area 9) (15:25-16:40) Chairs: T. Machida (Univ. of Tokyo) T. Nakaoka (Sophia Univ.)

H-4: Thin Film Silicon Solar Cells (Area 15) (15:25-16:40) Chairs: M. Isomura (Tokai Univ.) A. Masuda (AIST)

I-4: Nanostructure Growth (Area 8) (15:25-16:40) Chairs: H. Hibino (NTT) T. Iwai (Fujitsu)

J-4: Sensing & Recognition Systems (Area 5) (15:25-16:35) Chairs: H. Morimura (NTT) T. Yoshida (Hiroshima Univ.)

K-4: 3D/TSV Interconnect (1) (Area 2) (15:25-16:35) Chairs: T. Fukushima (Tohoku Univ.) P. Leduc (CEA-leti)

M-4: Device Physics : Novel Materials and Functions (Area 10) (15:25-16:40) Chairs: M. Sakai (Chiba Univ.) H. Matsui (AIST)

15:25 G-4-1 (Invited) Electrical control of the spin-orbit interaction in a single InAs self-assembled Quantum dot R. Deacon1,2, Y. Kanai1, S. Takahashi4, A. Oiwa1,3, K. Shibata3,4, K. Hirakawa3,4, Y. Tokura5 and S. Traucha1, 1RIKEN Advanced Science Inst., 2The Univ. of Tokyo, 3CREST, 4 The Univ. of Tokyo and 5Univ. of Tsukuba (Japan)

15:25 H-4-1 (Invited) Thin-film solar cells by liquid silicon T. Shimoda1,2 and T. Masuda1,2, 1Japan Advanced Inst. of Science and Tech. and 2 Japan Science and Tech. Agency (Japan)

15:25 I-4-1 (Invited) Droplet etching: Application to Quantum Dots and Nanopillars for Thermoelectrics C. Heyn, D. Sonnenberg, A. Graf, J. Kerbst, T. Bartsch and W. Hansen, Univ. of Hamburg (Germany)

15:25 J-4-1 (Invited) Advanced Sensing Technology for Automobile Y. Nonomura, Toyota Central R&D Labs., Inc. (Japan)

15:25 K-4-1 (Invited) Development and Process integration for Interposer Application W. C. Lo, C. T. Ko and K. N. Chen, 1Electronics and Optoelectronics Research Laboratories, Industrial Tech. Research Inst. (ITRI) and 2Department of Electronics Engineering, National Chiao Tung Univ. (Taiwan)

15:25 M-4-1 (Invited) Magnetoresitance in Organic Materials H. Tada, Osaka Univ. (Japan)

15:55 G-4-2 Transient Current in the Spin Blockade Region of a Double Quantum Dot S. Sharmin1, K. Muraki2 and T. Fujisawa1, 1 Toyko Tech. and 2NTT Basic Res. Labs. (Japan)

15:55 H-4-2 Spectroscopic detection of medium range order in device-grade a-Si:H: dangling bond defects, and the Staebler-Wronski Effect G. Lucovsky, G. N. Parsons, D. Zeller and J. Kim, NC State Univ. (USA)

15:55 I-4-2 Selective Growth of Gallium Arsenide on Germanium Fins with Different Orientations formed on 10 degrees Offcut Germanium-on-Insulator Substrate K. H. Goh1, Y. Cheng2, K. L. Low1, E. Y. J. Kong1, C. K. Chia2, E. H. Toh3 and Y. C. Yeo1, 1National Univ. of Singapore, 2Inst. of Material Research and Engineering (IMRE) Inst and 3GLOBALFOUNDRIES (Singapore)

15:55 J-4-2 Application of Composite Haar-like Features to Vehicle Detection with MassiveParallel Memory-Embedded SIMD Matrix Processor M. Omori, H. Hiramoto, T. Koide and H. J. Mattausch, Hiroshima Univ. (Japan)

15:55 K-4-2 Room-Temperature Cu Microjoining Using Ultrasonic Bonding of Cone Shaped Bump L. J. Qiu1, T. Asano1, K. Noda2 and S. Nakai2, 1Kyushu Univ. and 2Adwelds Co.,Ltd (Japan)

15:55 M-4-2 Potential of Organic Materials for the Application to Thermoelectric Generators M. Nakamura1, Y. Tomatsu1, R. Matsubara1, A. Hoshi2 and M. Sakai2, 1Nara Inst. of Sci. and Tech. and 2Chiba Univ. (Japan)

16:10 G-4-3 The observation of rectangle shape geometric current blockade in vertical double quantum dots Y. C. Sun1, S. M. Huang2, J. J. Lin1,3, K. Kono4 and K. Ono4, 1National Chiao-Tung Univ., 2National Sun Yat-Sen Univ., 3National Chiao-Tung Univ. and 4Low Temperature Lab., RIKEN (Taiwan)

16:10 H-4-3 Defect Termination of Flash-LampCrystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing K. Ohdaira, Jpn. Adv. Inst. Sci. & Tech. and PRESTO, JST (Japan)

16:10 I-4-3 InGaP Nanowires grown by SelectiveArea MOVPE F. Ishizaka1, K. Ikejiri1, K. Tomioka1,2 and T. Fukui1, 1Hokkaido Univ. and 2PRESTO-JST (Japan)

16:15 J-4-3 Ferroelectric synapse device with brainlike learning function: Analog conductance control in a ferroelectric-gate fieldeffect transistor based on the timing difference between two pulses Y. Nishitani, Y. Kaneko, M. Ueda, E. Fujii and A. Tsujimura, Panasonic Corp. (Japan)

16:15 K-4-3 Electrostatic Temporary Bonding Technology and TSV Formation for Reconfigured Wafer-to-Wafer 3D Integration H. Hashiguchi1, J. C. Bea2, Y. Ohara1, T. Fukushima2, K. W. Lee2, T. Tanaka1, 3 and M. Koyanagi2, 1Dept. of Bioengineering and Robotics, Tohoku Univ., 2New Industry Creation Hatchery Center , Tohoku Univ. and 3 Dept. of Biomedical Engineering, Tohoku Univ. (Japan)

16:10 M-4-3 A Novel Microscope for Visualizing Electric Field in Organic Thin Film Devices Using Electric-Field-Induced SecondHarmonic Generation D. Taguchi1, T. Manaka1, M. Iwamoto1, T. Karasuda2 and M. Kyomasu2, 1Tokyo Tech and 2Precise Gauges (Japan)

16:25 G-4-4 Fabrication and Characterization of pChannel Si Double-Quantum-Dot Structures K. Yamada1, T. Kodera1,2,3, T. Kambara1, Y. Kawano1 and S. Oda1, 1Quantum Nanoelectronics Research Center, Tokyo Inst. of Tech., 2Inst. for Nano Quantum Information Electronics, The Univ. of Tokyo and 3 PRESTO, Japan Science and Tech. Agency (JST) (Japan)

16:25 H-4-4 Effect of Geometrical Profile of Nanostructured Arrays on the Enhanced Optical Absorption of Silicon Thin-film Solar Cells Y. C. Yao, P. W. Lu and Y. J. Lee, National Taiwan Normal Univ. (Taiwan)

16:25 I-4-4 Growth of β-FeSi nanocrystals by phase transition and enhancement of light emission property K. Nishimura1, T. Nakajima1, Y. Nagasawa1, K. Narumi2 and Y. Maeda1,2, 1Kyoto Univ. and 2ASRC, JAEA (Japan)

16:25 M-4-4 Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation Y. Tomita1,2 and T. Nakayama3, 1Univ. of Tsukuba, 2JST-CREST and 3Chiba Univ. (Japan)

Coffee Break G-5: Quantum Transport in Nanostructures (2) (Area 9) (17:05-18:20) Chairs: T. Nakaoka (Sophia Univ.) T. Machida (Univ. of Tokyo)

H-5: New Concept (Area 15) (17:05-17:50) Chairs: M. Isomura (Tokai Univ.) A. Masuda (AIST)

J-5: Advanced Circuits (Area 5) (17:05-18:25) Chairs: M. Horiguchi (Renesas) T. Koide (Hiroshima Univ.)

K-5: 3D/TSV Interconnect (2) (Area 2) (17:05-18:15) Chairs: M. Ueki (Renesas) K. N. Chen (National Chiao Tung Univ.)

M-5: Organic Optoelectronics Devices (Area 10) (17:05-18:20) Chairs: K. Shinbo (Niigata Univ.) T. Lee (Seoul National Univ.)

17:05 G-5-1 (Invited) Detection of nuclear spin signals from a quantum dot under Kondo effect regime M. Kawamura, RIKEN Advanced Science Inst. (Japan)

17:05 H-5-1 (Late News) Low-Resistance TCO n-p Tunnel Recombination Junction for Multi-Cell Interface Layers in Thin-Film Solar Cells K. Kanamoto, H. Tokioka, H. Konishi, M. Yamamuka, H. Fuchigami, Y. Tsuda and M. Inoue, Mitsubishi Electric Corp. (Japan)

17:05 J-5-1 102.4 GS/s Impulse Sampling Circuit with Low Power and Low Timing Error Clock Generation A. Toya1,2, K. Sogo1, N. Sasaki1,3 and T. Kikkawa1, 1Hiroshima Univ., 2Kure National College of Tech. and 3Gunma National College of Tech. (Japan)

17:05 K-5-1 (Invited) Thermal and Mechanical Stress in HighDensity 3D-LSIs M. Murugesan1, H. Kobayashi2, T. Fukushima1, T. Tanaka3 and M. Koyanagi1, 1NICHe, Tohoku Univ. and 2ASET (Japan)

17:05 M-5-1 (Invited) Carbon Materials Nanoengineering for High Performance Optoelectronics S. O. Kim1, J. S. Park2 and J. O. Hwang1, 1 Materials Science &Engineering and 2 KAIST (Korea)

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Wednesday, September 26 2F B-1

2F B-2

1F C-1

1F C-2

1F D

1F E

A-5: Photonic Crsytals (Area 7)

B-5: ReRAM (2) (Area 4)

C-5: Graphene Growth (1) (Area 8&9&13)

D-5: Post-Si Technology(2) (Area 1)

E-5: Mobility Enhancement (Area 3)

F-5: GaN Power Devices (2) (Area 6&14)

G tu

17:35 A-5-2 Room temperature 1.55 μm electroluminescence from Ge quantum dots embedded in H1-type photonic crystal nanocavities using lateral current injection X. Xu, T. Tsuboi, T. Chiba, T. Maruizumi and Y. Shiraki, Tokyo City Univ. (Japan)

17:25 B-5-2 Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Tirich TiN electrode B. Kim, W. Kim, H. Kim, K. Jung, W. Park, B. Seo, M. Joo, K. Lee, K. Hong and S. Park, SK Hynix Inc. (Korea)

17:20 C-5-2 CVD Growth of Mono- and Bi-layer Graphene from Ethanol X. Chen, P. Zhao, B. Hou, E. Einarsson, S. Chiashi and S. Maruyama, Univ. of Tokyo (Japan)

17:40 D-5-2 Oxidation Kinetics of Ge by Oxygen Radicals at Low Temperatures and Electrical Properties of GeO2/Ge Gate Stacks W. Song1,2, C. H. Lee1,2, T. Nishimura1,2, K. Nagashio1,2 and A. Toriumi1,2, 1Univ. Tokyo and 2 JST-CREST (Japan)

17:25 E-5-2 On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk technology I. Ben Akkez1,3, C. Diouf1,3, A. Cros1, C. Fenouillet Beranger1,2, P. Perreau1,2, F. Balestra3, G. Ghibaudo3 and F. Boeuf1, 1STmicroelectronics, 2CEA-LETI and 3IMEP/LAHC (France)

17:20 F-5-2 Improved Electrical Characteristics of AlGaN/ GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer N. Jeon1, W. Choi1, J. H. Lee2, K. S. Kim2, H. Y. Cha3 and K. S. Seo1, 1Seoul National Univ., 2Samsung Electronics Company Ltd. and 3Hongik Univ. (Korea)

17 D an do T. No 3 U

17:50 A-5-3 Electro-Mechanical Control of Q factor in Photonic Crystal Nanobeam Cavity R. Ohta, Y. Ota, H. Takagi, N. Kumagai, K. Tanabe, S. Ishida, S. Iwamoto and Y. Arakawa, Univ. of Tokyo (Japan)

17:45 B-5-3 Formation free and high-performance crosspoint resistive switching memory using Ir/TaOx/ W structure A. Prakash1, S. Maikap1, C. S. Lai1, W. S. chen2, H. Y. Lee2, F. T. Chen2 and M. J. Tsai2, 1Chang Gung Univ. and 2Indus. Tech. Res. Inst. (Taiwan)

17:35 C-5-3 Efficient CVD Graphene Transfer Techniques by using Oxide Passivations J. Yamaguchi, K. Hayashi, S. Sato and N. Yokoyama, AIST (Japan)

18:00 D-5-3 Atomically controlled heteroepitaxy of a singlecrystalline germanium film on a metallic silicide S. Yamada, M. Kawano, K. Tanikawa, M. Miyao and K. Hamaya, Kyushu Univ. (Japan)

17:45 E-5-3 Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel PFETS: A TCAD Study G. Eneman, A. De Keersgieter, L. Witters, J. Mitard, B. Vincent, A. Hikavyy, R Loo, N. Horiguchi, N. Collaert and A. Thean, IMEC (Belgium)

17:35 F-5-3 Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator W. Choi1, H. Ahn1, N. Jeon1, I. Min1, H. Cha2 and K. Seo1, 1Seoul National Univ. and 2Hongik Univ. (Korea)

17 El eq ni D K. Na Ko 2 T IN

18:05 B-5-4 (Late News) Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure S. Maikap1, W. Banerjee1, B. L. You1, D. Jana1, H. Y. Lee2, W. S. Chen2, F. T. Chen2, M. J. Kao2 and M. J. Tsai2, 1Thin Film Nano. Tech. Lab., Department of Electronic Engineering, Chang Gung Univ. and 2 Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. (Taiwan)

17:50 C-5-4 Growth of High-Quality h-BN Nanosheets for Graphene Electronics J. Lee1, K. H. Lee1, H. J. Shin2, I. Y. Lee1, G. H. Kim1, J. Y. Choi2 and S. W. Kim1, 1Sungkyunkwan Univ. and 2Samsung Advanced Inst. of Tech. (Korea)

18:05 E-5-4 Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si S. H. Jeon1, N. Taoka1,2, H. Matsumoto3, K. Nakano3, S. Koyama3, H. Kakibayasi3, K. Araki4, M. Miyashita4, K. Izunome4, M. Takenaka1 and S. Takagi1, 1Univ. of Tokyo, 2Nagoya Univ., 3Hitachi High-technologies Corp. and 4Covalent Silicon Corp. (Japan)

17:50 F-5-4 GaN Power Electronics and Applications Yuvaraj Dora, Yifeng Wu, Likun Shen, Primit Parikh and Umesh Mishra, Transphorm Inc. (USA)

18 El in al R. an 2 N

18:05 C-5-5 (Late News) Graphene ReRAM towards All Graphene LSIs: Experimental Demonstration of Two-terminal ReRAM Operation in Electrically Broken Monoand Multi-layer Graphene A. Shindome1,2, Y. Doioka1,2, S. Oda1 and K. Uchida1,2, 1Toyko Tech. and 2Keio Univ. (Japan)

Rump Sessions (RS-A;Room D & RS-B;Room E)

R

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Wednesday, September 26 1F G

1F H

2F I

2F J

2F K

5F 554

5F 555

G-5: Quantum Transport in Nanostructures (2) (Area 9)

H-5: New Concept (Area 15)

J-5: Advanced Circuits (Area 5)

K-5: 3D/TSV Interconnect (2) (Area 2)

M-5: Organic Optoelectronics Devices (Area 10)

17:35 G-5-2 Detection of a charge qubit by the Kondo and the Fano-Kondo effects in quantum dots T. Tanamoto1, Y. X. Liu2, X. Hu3 and F. Nori4, 1Toshiba Corp., 2Tsinghua Univ. 3 Univ. at Baffalo, SUNY and 4Riken (Japan)

17:20 H-5-2 A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell M. H. Liao1, C. H. Chen1, L. C. Chang1, C. Yang1, S. C. Kao1 and C. F. Hsieh2, 1National Taiwan Univ. and 2Industrial Tech. Research Inst. (Taiwan)

17:25 J-5-2 Eight-bit CPU with Nonvolatile Registers Capable of Holding Data for 40 Days at 85oC Using Crystalline In-Ga-Zn Oxide Thin Film Transistors T. Ohmaru, S. Yoneda, T. Nishijima, E. Masami, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsumi, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama and S. Yamazaki, Semiconductor Energy Lab. Corp. Ltd. (Japan)

17:35 K-5-2 Dominant Structural Factors of Residual Stress Distribution in Stacked Silicon Chips Mounted in 3D Packages and Modules K. Suzuki, H. Tago, F. Endo, N. Murata and H. Miura, Tohoku Univ. (Japan)

17:35 M-5-2 Influence of Source/Drain Electrodes on the Properties of Top-gate-type Polymer Light-emitting Transistors I. Ikezoe, Y. Kusumoto, H. Kajii and Y. Ohmori, Osaka Univ. (Japan)

17:50 G-5-3 Electron Spin Depolarization in Nonequilibrium Quantum Wires Accompanied with Dynamic Nuclear Polarization Detected by the Noise Measurement K. Chida1, M. Hashisaka1,2, Y. Yamauchi1, S. Nakamura1,3, T. Arakawa1, T. Machida4, K. Kobayashi1 and T. Ono1, 1ICR, Kyoto Univ., 2 Tokyo Inst. of Tech., 3AIST and 4IIS and INQIE, Univ. of Tokyo (Japan)

17:35 H-5-3 Imaging of transient photoexcited current in solar cell using femtosecond laser pulses H. Nakanishi1, K. Salek2, A. Ito1, K. Takayama2, I. Kawayama2, H. Murakami2 and M. Tonouchi2, 1Dainippon Screen Manufac. and 2Osaka Univ. (Japan)

17:45 J-5-3 A Power-Efficient High-Voltage CMOS Gate Driver for Power MOS Transistors K. Ko and H. Lin, National Chung Hsing Univ. (Taiwan)

17:55 K-5-3 TSV Scaling with Constant Liner Thickness and the Related Implications on Thermo-mechanical Stress, Capacitance, and Leakage Current C. S. Tan1, J. Zhang1, K. Ghosh1, L. Zhang1, Y. Dong3, H. Yu2, C. M. Tan1 and G. Xia3, 1 Nanyang Technological Univ., 2Inst. of Microelectronics and 3Univ. of British Columbia (Singapore)

17:50 M-5-3 Printable Top-Gate Type Polymer LightEmitting Transistors with Amorphous Fluoropolymer Insulators Patterned by Using the Vacuum UV Treatment H. Kajii, D. Terashima, Y. Kusumoto, I. Ikezoe and Y. Ohmori, Osaka Univ. (Japan)

18:05 G-5-4 (Late News) Electrostatic tuning of charge velocity in a quantum Hall edge channel defined along the perimeter of a gate metal R. Murata1, M. Hashisaka1, K. Muraki2 and T. Fujisawa1, 1Toyko Tech. of Tech. and 2 NTT Basic Res. Lab. (Japan)

18:05 J-5-4 A DRAM Sense Amplifier Circuit by Multi-pillar Vertical MOSFET Realizing Sub-1V Core Voltage Operation without Overdrive Technique H. Na1,2 and T. Endoh1,2, 1Tohoku Univ. and 2 JST-CREST (Japan)

Rump Sessions (RS-A;Room D & RS-B;Room E)

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18:05 M-5-4 (Late News) The Influence of Gate Insulator Dipoles on Charge Transport in SolutionProcessed Top-Gate Organic Field-Effect Transistors with High Mobility and Operational Stability K. Takagi1, T. Nagase1,2, T. Kobayashi1,2 and H. Naito1,2, 1Osaka Prefecture Univ. and 2 The Research Inst. for Molecular Electronic Devices (RIMED) (Japan)